IRF9520 Vishay, IRF9520 Datasheet - Page 5
![MOSFET P-CH 100V 6.8A TO-220AB](/photos/5/29/52977/698-to-220ab_sml.jpg)
IRF9520
Manufacturer Part Number
IRF9520
Description
MOSFET P-CH 100V 6.8A TO-220AB
Manufacturer
Vishay
Specifications of IRF9520
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
600 mOhm @ 4.1A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
6.8A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
18nC @ 10V
Input Capacitance (ciss) @ Vds
390pF @ 25V
Power - Max
60W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Configuration
Single
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.6 Ohms
Drain-source Breakdown Voltage
- 100 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
6.8 A
Power Dissipation
60 W
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
*IRF9520
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRF9520
Manufacturer:
INTERSIL
Quantity:
20 000
Company:
Part Number:
IRF9520N
Manufacturer:
IR
Quantity:
62 993
Company:
Part Number:
IRF9520N
Manufacturer:
IR
Quantity:
12 500
Company:
Part Number:
IRF9520NL
Manufacturer:
IR
Quantity:
12 500
Part Number:
IRF9520NS
Manufacturer:
IR
Quantity:
20 000
Part Number:
IRF9520PBF
Manufacturer:
VISHAY/威世
Quantity:
20 000
Document Number: 91074
S11-0512-Rev. B, 21-Mar-11
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
91074_09
Fig. 9 - Maximum Drain Current vs. Case Temperature
7.0
6.0
5.0
4.0
3.0
2.0
1.0
0.0
91074_11
25
10
0.1
10
-2
1
50
10
T
-5
D = 0.5
0.2
0.1
0.05
0.02
0.01
C
, Case Temperature (°C)
75
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
100
10
-4
Single Pulse
(Thermal Response)
125
This datasheet is subject to change without notice.
150
10
175
t
-3
1
, Rectangular Pulse Duration (s)
10
-2
Fig. 10a - Switching Time Test Circuit
10 %
90 %
Fig. 10b - Switching Time Waveforms
V
V
GS
DS
R
0.1
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
G
- 10 V
V
t
GS
d(on)
V
Notes:
1. Duty Factor, D = t
2. Peak T
DS
IRF9520, SiHF9520
t
r
1
j
= P
D.U.T.
P
DM
www.vishay.com/doc?91000
DM
R
Vishay Siliconix
D
x Z
t
d(off)
t
1
1
thJC
/t
2
t
t
+ T
2
f
-
+
www.vishay.com
C
10
V
DD
5