FDP060AN08A0 Fairchild Semiconductor, FDP060AN08A0 Datasheet

MOSFET N-CH 75V 80A TO-220AB

FDP060AN08A0

Manufacturer Part Number
FDP060AN08A0
Description
MOSFET N-CH 75V 80A TO-220AB
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet

Specifications of FDP060AN08A0

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
6 mOhm @ 80A, 10V
Drain To Source Voltage (vdss)
75V
Current - Continuous Drain (id) @ 25° C
80A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
95nC @ 10V
Input Capacitance (ciss) @ Vds
5150pF @ 25V
Power - Max
255W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.006 Ohm @ 10 V
Drain-source Breakdown Voltage
75 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
16 A
Power Dissipation
255000 mW
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

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Part Number
Manufacturer
Quantity
Price
Part Number:
FDP060AN08A0
Manufacturer:
FSC
Quantity:
90 000
Part Number:
FDP060AN08A0
Manufacturer:
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Quantity:
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Part Number:
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Quantity:
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©2002 Fairchild Semiconductor Corporation
(FLANGE)
DRAIN
FDB060AN08A0 / FDP060AN08A0
N-Channel PowerTrench
75V, 80A, 6.0m
Features
• r
• Q
• Low Miller Charge
• Low Q
• UIS Capability (Single Pulse and Repetitive Pulse)
• Qualified to AEC Q101
Formerly developmental type 82680
MOSFET Maximum Ratings
Thermal Characteristics
This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a
V
V
I
E
P
T
R
R
R
D
GS
J
DSS
AS
D
Symbol
, T
JC
JA
JA
All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems
DS(ON)
g
(tot) = 73nC (Typ.), V
STG
RR
= 4.8m (Typ.), V
Body Diode
Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html.
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Continuous (T
Continuous (T
Pulsed
Single Pulse Avalanche Energy (Note 1)
Power dissipation
Derate above 25
Operating and Storage Temperature
Thermal Resistance Junction to Case TO-220,TO-263
Thermal Resistance Junction to Ambient TO-220,TO-263 (Note 2)
Thermal Resistance Junction to Ambient TO-263, 1in
FDP SERIES
TO-220AB
GS
GS
copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/
amb
C
= 10V
< 127
= 10V, I
o
C
= 25
o
o
C, V
GATE
C, V
D
®
DRAIN
= 80A
SOURCE
GS
MOSFET
GS
Parameter
= 10V)
T
= 10V, with R
C
= 25°C unless otherwise noted
GATE
SOURCE
certification.
JA
FDB SERIES
TO-263AB
= 43
Applications
• 42V Automotive Load Control
• Starter / Alternator Systems
• Electronic Power Steering Systems
• Electronic Valve Train Systems
• DC-DC converters and Off-line UPS
• Distributed Power Architectures and VRMs
• Primary Switch for 24V and 48V systems
o
2
C/W)
copper pad area
(FLANGE)
DRAIN
-55 to 175
Ratings
Figure 4
G
0.58
350
255
1.7
75
80
16
62
43
FDB060AN08A0 / FDP060AN08A0 Rev. A
20
November 2002
D
S
Units
W/
o
o
o
C/W
C/W
C/W
mJ
o
W
V
V
A
A
A
C
o
C

Related parts for FDP060AN08A0

FDP060AN08A0 Summary of contents

Page 1

... Primary Switch for 24V and 48V systems GATE SOURCE DRAIN GATE SOURCE TO-263AB FDB SERIES T = 25°C unless otherwise noted C Parameter 10V 10V, with C/ copper pad area certification. November 2002 D G DRAIN (FLANGE) S Ratings Figure 4 350 255 1.7 -55 to 175 0. FDB060AN08A0 / FDP060AN08A0 Rev. A Units C/W o C/W o C/W ...

Page 2

... 40A 75A, dI /dt = 100A 75A, dI /dt = 100A Tape Width Quantity 24mm 800 units N/A 50 units Min Typ Max 150 250 100 0.0048 0.006 - 0.0066 0.010 - 0.010 0.013 - 5150 - - 800 - - 230 - 40V DD = 80A - 1.0mA - 147 - 113 - - 1. 1 FDB060AN08A0 / FDP060AN08A0 Rev. A Units ...

Page 3

... Figure 2. Maximum Continuous Drain Current RECTANGULAR PULSE DURATION ( PULSE WIDTH (s) Figure 4. Peak Current Capability CURRENT LIMITED BY PACKAGE 50 75 100 125 150 CASE TEMPERATURE ( C) C Case Temperature NOTES: DUTY FACTOR PEAK FOR TEMPERATURES o ABOVE 25 C DERATE PEAK CURRENT AS FOLLOWS: 175 - 150 - FDB060AN08A0 / FDP060AN08A0 Rev. A 175 ...

Page 4

... AS DSS (L/R)ln[(I *R)/(1.3*RATED +1] AS DSS DD STARTING STARTING T = 150 TIME IN AVALANCHE (ms) AV Capability 10V PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX 0.5 1.0 1 DRAIN TO SOURCE VOLTAGE ( 10V - 120 160 JUNCTION TEMPERATURE ( C) J FDB060AN08A0 / FDP060AN08A0 Rev 100 = 5V 2.0 = 80A 200 ...

Page 5

... C) Figure 12. Normalized Drain to Source Breakdown Voltage vs Junction Temperature ISS Figure 14. Gate Charge Waveforms for Constant I = 250 120 160 JUNCTION TEMPERATURE ( 40V DD WAVEFORMS IN DESCENDING ORDER 80A 16A GATE CHARGE (nC) g Gate Current FDB060AN08A0 / FDP060AN08A0 Rev. A 200 80 ...

Page 6

... Figure 19. Switching Time Test Circuit ©2002 Fairchild Semiconductor Corporation DUT 0.01 Figure 16. Unclamped Energy Waveforms gs2 DUT g(REF) 0 Figure 18. Gate Charge Waveforms d(ON 90 DUT V GS 50% 10% 0 Figure 20. Switching Time Waveforms BV DSS g(TOT g(TH OFF t d(OFF 10% 10% 90% 50% PULSE WIDTH FDB060AN08A0 / FDP060AN08A0 Rev 10V 90% ...

Page 7

... application’s ambient never exceeded (EQ 0.1 is (0.645) DM Figure 21. Thermal Resistance vs Mounting dissipation. Pulse (EQ. 2) Area in Inches Squared (EQ. 3) Area in Centimeters Squared R = 26.51+ 19.84/(0.262+Area) EQ 26.51+ 128/(1.69+Area) EQ (6.45) (64. AREA, TOP COPPER AREA in (cm ) Pad Area FDB060AN08A0 / FDP060AN08A0 Rev ...

Page 8

... PSPICE Electrical Model .SUBCKT FDP060AN08A0 rev October 2002 2.5e 2.1e-9 Cin 6 8 4.7e-9 Dbody 7 5 DbodyMOD Dbreak 5 11 DbreakMOD Dplcap 10 5 DplcapMOD Ebreak 82.1 Eds Egs Esg Evthres Evtemp GATE Lgate 1 9 5.3e-9 Ldrain 2 5 1.0e-9 Lsource 3 7 5e-9 RLgate RLdrain ...

Page 9

... DPLCAP 10 RSLC2 - 6 ESG 8 EVTHRES + + 19 LGATE EVTEMP 8 RGATE + RLGATE CIN S1A S2A S1B S2B EGS EDS LDRAIN 5 RLDRAIN RSLC1 51 ISCL DBREAK 50 RDRAIN 11 DBODY MWEAK EBREAK MMED + MSTRO 17 18 LSOURCE - 8 7 RSOURCE RLSOURCE RBREAK 17 18 RVTEMP VBAT RVTHRES FDB060AN08A0 / FDP060AN08A0 Rev. A DRAIN 2 SOURCE 3 ...

Page 10

... Fairchild Semiconductor Corporation JUNCTION th RTHERM1 CTHERM1 6 RTHERM2 CTHERM2 5 RTHERM3 CTHERM3 4 RTHERM4 CTHERM4 3 RTHERM5 CTHERM5 2 RTHERM6 CTHERM6 tl CASE FDB060AN08A0 / FDP060AN08A0 Rev. A ...

Page 11

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FACT™ ActiveArray™ FACT Quiet Series™ ® Bottomless™ FAST CoolFET™ FASTr™ CROSSVOLT™ ...

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