FDP060AN08A0 Fairchild Semiconductor, FDP060AN08A0 Datasheet - Page 5

• Manufacturer Part Number: FDP060AN08A0
• Description: MOSFET N-CH 75V 80A TO-220AB
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDP060AN08A0

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 6 mOhm @ 80A, 10V
• Drain To Source Voltage (vdss): 75V
• Current - Continuous Drain (id) @ 25° C: 80A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 95nC @ 10V
• Input Capacitance (ciss) @ Vds: 5150pF @ 25V
• Power - Max: 255W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.006 Ohm @ 10 V
• Drain-source Breakdown Voltage: 75 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 16 A
• Power Dissipation: 255000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2002 Fairchild Semiconductor Corporation
Typical Characteristics
Figure 11. Normalized Gate Threshold Voltage vs
7000
Figure 13. Capacitance vs Drain to Source
1000
100
1.2
1.0
0.8
0.6
0.4
0.1
-80
V
C
GS
OSS
C
= 0V, f = 1MHz
RSS
-40
Junction Temperature
C
V
DS
C
DS
T
GD
+ C
J
, DRAIN TO SOURCE VOLTAGE (V)
, JUNCTION TEMPERATURE (
0
GD
Voltage
1
40
80
T
V
C
GS
C
ISS
= 25°C unless otherwise noted
= V
10
120
C
DS
o
GS
C)
, I
+ C
D
= 250 A
160
GD
200
75
Figure 14. Gate Charge Waveforms for Constant
Breakdown Voltage vs Junction Temperature
10
8
6
4
2
0
1.2
1.1
1.0
0.9
Figure 12. Normalized Drain to Source
0
-80
V
DD
I
D
= 250 A
= 40V
-40
T
20
J
, JUNCTION TEMPERATURE (
Gate Current
0
Q
g
, GATE CHARGE (nC)
40
40
WAVEFORMS IN
DESCENDING ORDER:
FDB060AN08A0 / FDP060AN08A0 Rev. A
80
I
I
D
D
= 80A
= 16A
120
60
o
C)
160
200
80