HUFA75343G3 Fairchild Semiconductor, HUFA75343G3 Datasheet - Page 3

• Manufacturer Part Number: HUFA75343G3
• Description: MOSFET N-CH 55V 75A TO-247
• Manufacturer: Fairchild Semiconductor
• Series: UltraFET™r

Specifications of HUFA75343G3

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 9 mOhm @ 75A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 75A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 205nC @ 20V
• Input Capacitance (ciss) @ Vds: 3000pF @ 25V
• Power - Max: 270W
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Electrical Specifications
Source to Drain Diode Specifications
Typical Performance Curves
©2001 Fairchild Semiconductor Corporation
CAPACITANCE SPECIFICATIONS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Source to Drain Diode Voltage
Reverse Recovery Time
Reverse Recovered Charge
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
1.2
1.0
0.8
0.6
0.4
0.2
0
0.01
0.1
0
2
1
10
-5
DUTY CYCLE - DESCENDING ORDER
0.5
0.2
0.1
0.05
0.02
0.01
TEMPERATURE
PARAMETER
25
PARAMETER
T
SINGLE PULSE
C
50
, CASE TEMPERATURE (
75
10
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
-4
T
C
= 25
100
o
C, Unless Otherwise Specified
125
SYMBOL
o
SYMBOL
C)
C
C
C
Q
OSS
V
RSS
ISS
t
SD
RR
rr
10
150
-3
t, RECTANGULAR PULSE DURATION (s)
V
f = 1MHz
(Figure 12)
I
I
I
DS
SD
SD
SD
175
= 25V, V
= 75A
= 75A, dI
= 75A, dI
TEST CONDITIONS
TEST CONDITIONS
GS
SD
SD
10
/dt = 100A/ s
/dt = 100A/ s
= 0V,
-2
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
80
60
40
20
0
25
CASE TEMPERATURE
50
10
-1
T
C
HUFA75343G3, HUFA75343P3, HUFA75343S3S Rev. B
, CASE TEMPERATURE (
75
MIN
NOTES:
DUTY FACTOR: D = t
PEAK T
-
-
-
MIN
-
-
-
100
J
= P
TYP
3000
1100
TYP
-
-
-
DM
230
10
x Z
0
125
P
DM
JC
o
1
MAX
1.25
C)
/t
100
200
MAX
x R
2
-
-
-
t
1
150
JC
t
2
+ T
UNITS
UNITS
C
nC
pF
pF
pF
ns
V
175
10
1