HUFA75343G3 Fairchild Semiconductor, HUFA75343G3 Datasheet - Page 8

• Manufacturer Part Number: HUFA75343G3
• Description: MOSFET N-CH 55V 75A TO-247
• Manufacturer: Fairchild Semiconductor
• Series: UltraFET™r

Specifications of HUFA75343G3

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 9 mOhm @ 75A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 75A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 205nC @ 20V
• Input Capacitance (ciss) @ Vds: 3000pF @ 25V
• Power - Max: 270W
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

SABER Electrical Model
REV February 1999
template HUFA75343 n2, n1, n3
electrical n2, n1, n3
{
var i iscl
d..model dbodymod = (is = 2.35e-12, cjo = 6.34e-9, tt = 3.950e-8, m = 0.6)
d..model dbreakmod = ()
d..model dplcapmod = (cjo = 21.5e-10, is = 1e-30, n = 10, m = 0.730)
m..model mmedmod = (type=_n, vto = 3.30, kp = 5.49, is = 1e-30, tox = 1)
m..model mstrongmod = (type=_n, vto = 3.87, kp = 145, is = 1e-30, tox = 1)
m..model mweakmod = (type=_n, vto = 2.92, kp = 0.050, is = 1e-30, tox = 1)
sw_vcsp..model s1amod = (ron = 1e-5, roff = 0.1, von = -6.90, voff = -3.90)
sw_vcsp..model s1bmod = (ron = 1e-5, roff = 0.1, von = -3.90, voff = -6.90)
sw_vcsp..model s2amod = (ron = 1e-5, roff = 0.1, von = 0.39, voff = 3.39)
sw_vcsp..model s2bmod = (ron = 1e-5, roff = 0.1, von = 3.39, voff = 0.39)
c.ca n12 n8 = 3.95e-9
c.cb n15 n14 = 5.05e-9
c.cin n6 n8 = 2.68e-9
d.dbody n7 n71 = model=dbodymod
d.dbreak n72 n11 = model=dbreakmod
d.dplcap n10 n5 = model=dplcapmod
i.it n8 n17 = 1
l.ldrain n2 n5 = 1e-9
l.lgate n1 n9 = 2.60e-9
l.lsource n3 n7 = 1.10e-9
k.k1 i(l.lgate) i(l.lsource) = l(l.lgate), l(l.lsource), 0.0085
m.mmed n16 n6 n8 n8 = model=mmedmod, l = 1u, w = 1u
m.mstrong n16 n6 n8 n8 = model=mstrongmod, l = 1u, w = 1u
m.mweak n16 n21 n8 n8 = model=mweakmod, l = 1u, w = 1u
res.rbreak n17 n18 = 1, tc1 = 1.04e-3, tc2 = 3.43e-7
res.rdbody n71 n5 = 2.21e-3, tc1 = 2.47e-3, tc2 = 3.97e-11
res.rdbreak n72 n5 = 9.1e-2, tc1 = -2.24e-4, tc2 = 5.23e-6
res.rdrain n50 n16 = 0.70e-3, tc1 = 4.44e-2, tc2 = 8.04e-5
res.rgate n9 n20 = 0.36
res.rldrain n2 n5 = 10
res.rlgate n1 n9 = 26.0
res.rlsource n3 n7 = 11.0
res.rslc1 n5 n51 = 1e-6, tc1 = 1.02e-4, tc2 = 2.07e-6
res.rslc2 n5 n50 = 1e3
res.rsource n8 n7 = 4.79e-3, tc1 = 0, tc2 = 0
res.rvtemp n18 n19 = 1, tc1 = -1.93e-3, tc2 = 1.38e-6
res.rvthres n22 n8 = 1, tc1 = -3.49e-3, tc2 = -1.27e-5
spe.ebreak n11 n7 n17 n18 = 58.39
spe.eds n14 n8 n5 n8 = 1
spe.egs n13 n8 n6 n8 = 1
spe.esg n6 n10 n6 n8 = 1
spe.evtemp n20 n6 n18 n22 = 1
spe.evthres n6 n21 n19 n8 = 1
sw_vcsp.s1a n6 n12 n13 n8 = model=s1amod
sw_vcsp.s1b n13 n12 n13 n8 = model=s1bmod
sw_vcsp.s2a n6 n15 n14 n13 = model=s2amod
sw_vcsp.s2b n13 n15 n14 n13 = model=s2bmod
v.vbat n22 n19 = dc = 1
equations {
i (n51->n50) + = iscl
iscl: v(n51,n50) = ((v(n5,n51)/(1e-9+abs(v(n5,n51))))*((abs(v(n5,n51)*1e6/609))** 2.5))
}
}
©2001 Fairchild Semiconductor Corporation
GATE
1
RLGATE
LGATE
9
RGATE
CA
12
20
EVTEMP
+
S1A
S1B
ESG
18
22
EGS
13
8
+
-
-
13
6
8
10
+
+
-
-
14
13
6
8
6
RSLC2
S2A
S2B
DPLCAP
EVTHRES
+
EDS
19
8
15
CB
CIN
-
+
-
5
8
5
MSTRO
14
51
21
RDRAIN
RSLC1
50
ISCL
16
8
MMED
HUFA75343G3, HUFA75343P3, HUFA75343S3S Rev. B
8
RDBREAK
DBREAK
IT
RSOURCE
MWEAK
17
EBREAK
RVTHRES
RBREAK
72
11
+
-
17
18
7
+
-
18
22
RVTEMP
19
RLSOURCE
71
LSOURCE
VBAT
RLDRAIN
RDBODY
DBODY
LDRAIN
SOURCE
DRAIN
2
3