SUM60N10-17-E3 Vishay, SUM60N10-17-E3 Datasheet - Page 3

• Manufacturer Part Number: SUM60N10-17-E3
• Description: MOSFET N-CH 100V 60A D2PAK
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SUM60N10-17-E3

• Transistor Polarity: N-Channel
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 16.5 mOhm @ 30A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 60A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 100nC @ 10V
• Input Capacitance (ciss) @ Vds: 4300pF @ 25V
• Power - Max: 3.75W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 0.0165 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 25 S
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 60 A
• Power Dissipation: 3750 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: 60A
• Drain Source Voltage Vds: 100V
• On Resistance Rds(on): 19mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 4V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SUM60N10-17-E3; SUM60N10-17-E3TR

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 72070
S-81224-Rev. B, 02-Jun-08
V
GS
6000
5000
4000
3000
2000
1000
120
100
= 10 thru 7 V
160
120
80
60
40
20
80
40
0
0
0
0
0
0
15
T
20
2
C
V
V
C
rss
DS
DS
= - 55 °C
Output Characteristics
- Drain-to-Source Voltage (V)
- Drain-to-Source Voltage (V)
Transconductance
I
30
D
- Drain Current (A)
Capacitance
40
4
C
45
C
oss
iss
60
6
60
80
8
75
125 °C
25 °C
6 V
5 V
4 V
100
10
90
0.025
0.020
0.015
0.010
0.005
0.000
120
100
20
16
12
80
60
40
20
8
4
0
0
0
0
0
V
I
D
DS
= 60 A
20
On-Resistance vs. Drain Current
= 50 V
1
V
30
GS
Transfer Characteristics
Q
V
g
GS
- Gate-to-Source Voltage (V)
- Total Gate Charge (nC)
40
I
D
2
= 10 V
- Drain Current (A)
Gate Charge
SUM60N10-17
60
60
Vishay Siliconix
3
T
25 °C
C
= 125 °C
80
4
www.vishay.com
90
100
5
- 55 °C
120
120
6
3