SUM60N10-17_08 VISHAY [Vishay Siliconix], SUM60N10-17_08 Datasheet

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... DS(on) 0.0165 100 0.019 TO-263 Top View Ordering Information: SUM60N10-17-E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T = 175 °C) J Pulsed Drain Current Avalanche Current b Single Pulse Avalanche Energy b Maximum Power Dissipation ...

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... SUM60N10-17 Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic Input Capacitance Output Capacitance Reverse Transfer Capacitance c Total Gate Charge ...

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... Document Number: 72070 S-81224-Rev. B, 02-Jun- 0.025 0.020 25 °C 0.015 125 °C 0.010 0.005 0.000 100 SUM60N10-17 Vishay Siliconix 120 100 125 ° ° Gate-to-Source Voltage (V) GS Transfer Characteristics ...

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... SUM60N10-17 Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2 2.0 1.5 1.0 0.5 0 Junction Temperature (°C) J On-Resistance vs. Junction Temperature www.vishay.com 4 100 10 1 100 125 150 175 130 125 120 115 110 105 100 ...

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... Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?72070. Document Number: 72070 S-81224-Rev. B, 02-Jun-08 125 150 175 - Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case SUM60N10-17 Vishay Siliconix 1000 Limited DS(on) 100 °C C Single Pulse ...

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Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description ...