IRFBC40A Vishay, IRFBC40A Datasheet - Page 3

• Manufacturer Part Number: IRFBC40A
• Description: MOSFET N-CH 600V 6.2A TO-220AB
• Manufacturer: Vishay

Specifications of IRFBC40A

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.2 Ohm @ 3.7A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 6.2A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 42nC @ 10V
• Input Capacitance (ciss) @ Vds: 1036pF @ 25V
• Power - Max: 125W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 6.2A
• Drain Source Voltage Vds: 600V
• On Resistance Rds(on): 1.2ohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 4V
• Configuration: Single
• Resistance Drain-source Rds (on): 1.2 Ohms
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 6.2 A
• Power Dissipation: 125 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant, Contains lead / RoHS non-compliant
• Other names: *IRFBC40A

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Document Number: 91112
S11-0515-Rev. C, 21-Mar-11
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
0.01
100
100
0.1
10
0.1
10
1
1
0.1
1
Bottom
Top
Bottom
Top
Fig. 1 - Typical Output Characteristics
Fig. 2 - Typical Output Characteristics
VGS
VGS
15 V
10 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
4.5 V
15 V
10 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
4.5 V
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
1
10
4.5 V
20 µs PULSE WIDTH
T J = 25 °C
20 µs PULSE WIDTH
T J = 150 °C
4.5 V
10
This datasheet is subject to change without notice.
100
100
100
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0.1
10
1
Fig. 4 - Normalized On-Resistance vs. Temperature
-60 -40 -20
4.0
I D = 6.2 A
Fig. 3 - Typical Transfer Characteristics
T J = 150 °C
IRFBC40A, SiHFBC40A
5.0
V GS , Gate-to-Source Voltage (V)
0
T J , Junction Temperature
T J = 25 °C
6.0
20 40
7.0
60 80 100 120 140 160
www.vishay.com/doc?91000
V DS = 50 V
20 µs PULSE WIDTH
Vishay Siliconix
8.0
V GS = 10 V
www.vishay.com
9.0
10.0
3