IRFBC40A Vishay, IRFBC40A Datasheet - Page 4

• Manufacturer Part Number: IRFBC40A
• Description: MOSFET N-CH 600V 6.2A TO-220AB
• Manufacturer: Vishay

Specifications of IRFBC40A

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.2 Ohm @ 3.7A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 6.2A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 42nC @ 10V
• Input Capacitance (ciss) @ Vds: 1036pF @ 25V
• Power - Max: 125W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 6.2A
• Drain Source Voltage Vds: 600V
• On Resistance Rds(on): 1.2ohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 4V
• Configuration: Single
• Resistance Drain-source Rds (on): 1.2 Ohms
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 6.2 A
• Power Dissipation: 125 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant, Contains lead / RoHS non-compliant
• Other names: *IRFBC40A

IRFBC40A, SiHFBC40A
Vishay Siliconix
www.vishay.com
4
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
100000
10000
1000
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
100
10
1
20
16
12
4
8
0
1
0
I D = 6.2 A
V DS , Drain-to-Source Voltage (V)
8
Q G , Total Gate Charge (nC)
10
V GS = 0 V,
C iss = C gs + C gd , C ds
C rss = C gd
C oss = C ds + C gd
V DS = 480 V
V DS = 300 V
V DS = 120 V
16
C rss
C iss
C oss
24
100
For Test Circuit
This datasheet is subject to change without notice.
See Fig. 13
32
SHORTED
f = 1 MHz
40
1000
100
100
0.1
Fig. 7 - Typical Source-Drain Diode Forward Voltage
10
0.1
10
1
1
0.4
10
Fig. 8 - Maximum Safe Operating Area
T C = 25 °C
T J = 150 °C
Single Pulse
T J = 150 °C
OPERATING IN THIS AREA LIMITED
V SD , Source-to-Drain Voltage (V)
V DS , Drain-to-Source Voltage (V)
0.6
100
BY R DS(on)
0.8
S11-0515-Rev. C, 21-Mar-11
www.vishay.com/doc?91000
T J = 25 °C
Document Number: 91112
10 ms
100 µs
1 ms
10 µs
1000
1.0
V GS = 0 V
10000
1.2