IRF840 Vishay, IRF840 Datasheet - Page 2

• Manufacturer Part Number: IRF840
• Description: MOSFET N-CH 500V 8A TO-220AB
• Manufacturer: Vishay
• Type: Power MOSFETr

Specifications of IRF840

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 850 mOhm @ 4.8A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 8A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 63nC @ 10V
• Input Capacitance (ciss) @ Vds: 1300pF @ 25V
• Power - Max: 125W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.85Ohm
• Drain-source On-volt: 500V
• Gate-source Voltage (max): ±20V
• Drain Current (max): 8A
• Power Dissipation: 125W
• Output Power (max): Not RequiredW
• Frequency (max): Not RequiredMHz
• Noise Figure: Not RequireddB
• Power Gain: Not RequireddB
• Drain Efficiency: Not Required%
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Through Hole
• Pin Count: 3 +Tab
• Package Type: TO-220AB
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.85 Ohms
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 8 A
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRF840; IRF840IR

IRF840A, SiHF840A
Vishay Siliconix
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %.
c. C
www.vishay.com
2
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Ambient
Case-to-Sink, Flat, Greased Surface
Maximum Junction-to-Case (Drain)
SPECIFICATIONS T
PARAMETER
Static
Drain-Source Breakdown Voltage
V
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulsed Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Forward Turn-On Time
DS
oss
Temperature Coefficient
eff. is a fixed capacitance that gives the same charging time as C
J
a
= 25 °C, unless otherwise noted
SYMBOL
SYMBOL
ΔV
C
R
V
R
oss
R
t
t
R
I
I
C
C
C
V
DS(on)
C
C
V
GS(th)
Q
Q
d(on)
d(off)
I
GSS
DSS
Q
Q
DS
g
t
I
SM
t
thCS
thJA
thJC
oss
oss
oss
t
t
on
DS
SD
iss
rss
S
rr
fs
gs
gd
r
f
rr
g
eff.
/T
J
showing the
integral reverse
p - n junction diode
T
V
V
V
V
V
R
MOSFET symbol
J
DS
GS
GS
GS
GS
Intrinsic turn-on time is negligible (turn-on is dominated by L
G
= 25 °C, I
T
V
Reference to 25 °C, I
J
GS
= 9.1 Ω, R
= 400 V, V
= 10 V
= 0 V; V
= 10 V
= 0 V; V
= 25 °C, I
V
V
V
V
f = 1.0 MHz, see fig. 5
= 0 V; V
V
TYP.
oss
0.50
TEST CONDITIONS
DS
DS
GS
DS
DD
-
-
= 500 V, V
while V
= V
= 50 V, I
= 0 V, I
V
F
= 250 V, I
V
DS
V
DS
GS
= 8 A, dI/dt = 100 A/µs
DS
GS
GS
D
S
GS
DS
= 400 V, f = 1.0 MHz
= 1.0 V, f = 1.0 MHz
= ± 30 V
= 31 Ω, see fig. 10
= 8 A, V
I
= 25 V,
, I
D
= 0 V,
= 0 V, T
DS
= 0 V to 400 V
D
D
see fig. 6 and 13
= 8 A, V
D
= 250 µA
= 250 µA
is rising from 0 to 80 % V
GS
= 4.8 A
D
I
D
= 8 A
D
= 0 V
= 4.8 A
GS
= 1 mA
J
DS
G
= 125 °C
= 0 V
b
= 400 V,
b
c
b
MAX.
D
S
b
1.0
62
b
b
-
MIN.
500
2.0
3.7
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
DS
.
S-81275-Rev. A, 16-Jun-08
Document Number: 91065
TYP.
1018
1490
0.58
2.16
155
422
8.0
42
56
11
23
26
19
-
-
-
-
-
-
-
-
-
-
-
-
-
UNIT
°C/W
MAX.
± 100
0.85
3.24
S
250
633
4.0
9.0
8.0
2.0
25
38
18
32
-
-
-
-
-
-
-
-
-
-
and L
D
UNIT
V/°C
)
nA
µA
nC
µC
pF
ns
ns
Ω
V
V
S
A
V