FDI8441 Fairchild Semiconductor, FDI8441 Datasheet - Page 2
![MOSFET N-CH 40V 80A TO-262AB](/photos/5/58/55869/fdi8441_sml.jpg)
FDI8441
Manufacturer Part Number
FDI8441
Description
MOSFET N-CH 40V 80A TO-262AB
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet
1.FDI8441.pdf
(7 pages)
Specifications of FDI8441
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
2.7 mOhm @ 80A, 10V
Drain To Source Voltage (vdss)
40V
Current - Continuous Drain (id) @ 25° C
80A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
280nC @ 10V
Input Capacitance (ciss) @ Vds
15000pF @ 25V
Power - Max
300W
Mounting Type
Through Hole
Package / Case
I²Pak, TO-262 (3 straight leads + tab)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
2.7 Ohms
Drain-source Breakdown Voltage
40 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
26 A
Power Dissipation
300 W
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FDI8441
Manufacturer:
Fairchild Semiconductor
Quantity:
135
Part Number:
FDI8441
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
FDI8441 Rev.A
MOSFET Maximum Ratings
Thermal Characteristics
Package Marking and Ordering Information
Electrical Characteristics
Off Characteristics
On Characteristics
Dynamic Characteristics
V
V
I
E
P
T
R
R
R
B
I
I
V
r
C
C
C
R
Q
Q
Q
Q
Q
D
DSS
GSS
DS(on)
DS
GS
AS
D
J
VDSS
GS(th)
θJC
θJA
θJA
iss
oss
rss
G
Device Marking
g(TOT)
g(TH)
gs
gs2
gd
, T
Symbol
Symbol
STG
FDI8441
Drain to Source Voltage
Gate to Source Voltage
Drain Current Continuous (T
Continuous (T
Pulsed
Single Pulse Avalanche Energy
Power dissipation
Derate above 25
Operating and Storage Temperature
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
Thermal Resistance Junction to Ambient, 1in
Drain to Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Gate to Source Threshold Voltage
Drain to Source On Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge at 10V
Threshold Gate Charge
Gate to Source Gate Charge
Gate Charge Threshold to Plateau
Gate to Drain “Miller” Charge
FDI8441
Device
amb
Parameter
o
C
= 25
o
C, V
T
GS
C
J
TO-262AB
Parameter
= 25°C unless otherwise noted
Package
< 160
T
= 10V, with R
C
= 25°C unless otherwise noted
o
C, V
GS
I
V
V
V
V
I
I
T
V
f = 1MHz
V
V
V
D
D
D
J
DS
GS
GS
DS
DS
GS
GS
GS
= 250mA, V
= 80A, V
= 80A, V
θJA
= 175°C
= 10V)
2
= 0V
2
= 32V
= V
= 25V, V
= ±20V
= 0.5V, f = 1MHz
= 0 to 10V
= 0 to 2V
copper pad area
Test Conditions
= 43
Reel Size
GS
Tube
, I
o
GS
GS
C/W)
D
GS
GS
= 250μA
= 10V
= 10V,
= 0V,
= 0V
T
V
J
I
I
DD
g
D
= 150°C
(Note 1)
(Note 2)
= 1mA
= 35A
= 20V
Tape Width
NA
Min
40
2
-
-
-
-
-
-
-
-
-
-
-
-
-
-
See Figure 4
-55 to 175
Ratings
15000
1250
Typ
685
215
±20
947
300
0.5
1.1
2.8
2.2
3.8
62
43
29
60
32
49
40
80
26
2
-
-
-
-
www.fairchildsemi.com
±100
Quantity
Max
250
280
50 units
2.7
4.7
38
1
4
-
-
-
-
-
-
-
-
o
o
o
Units
Units
W/
C/W
C/W
C/W
mΩ
nC
nC
nC
nC
nC
μA
pF
pF
pF
mJ
nA
o
Ω
W
V
V
V
V
A
C
o
C