FDI8441 Fairchild Semiconductor, FDI8441 Datasheet - Page 4
![MOSFET N-CH 40V 80A TO-262AB](/photos/5/58/55869/fdi8441_sml.jpg)
FDI8441
Manufacturer Part Number
FDI8441
Description
MOSFET N-CH 40V 80A TO-262AB
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet
1.FDI8441.pdf
(7 pages)
Specifications of FDI8441
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
2.7 mOhm @ 80A, 10V
Drain To Source Voltage (vdss)
40V
Current - Continuous Drain (id) @ 25° C
80A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
280nC @ 10V
Input Capacitance (ciss) @ Vds
15000pF @ 25V
Power - Max
300W
Mounting Type
Through Hole
Package / Case
I²Pak, TO-262 (3 straight leads + tab)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
2.7 Ohms
Drain-source Breakdown Voltage
40 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
26 A
Power Dissipation
300 W
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FDI8441
Manufacturer:
Fairchild Semiconductor
Quantity:
135
Part Number:
FDI8441
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
FDI8441 Rev.A
Typical Characteristics
Figure 1. Normalized Power Dissipation vs Case
10000
1000
1.2
1.0
0.8
0.6
0.4
0.2
0.0
100
1E-3
0.01
10
0.1
0
10
2
1
10
-5
V
-5
SINGLE PULSE
GS
D = 0.50
DUTY CYCLE - DESCENDING ORDER
SINGLE PULSE
25
= 10V
0.20
0.10
0.05
0.02
0.01
T
C
, CASE TEMPERATURE
50
Temperature
Figure 3. Normalized Maximum Transient Thermal Impedance
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
10
75
10
-4
-4
100
125
Figure 4. Peak Current Capability
(
o
C
10
)
10
t, RECTANGULAR PULSE DURATION(s)
t, RECTANGULAR PULSE DURATION(s)
-3
150
-3
175
4
10
Figure 2. Maximum Continuous Drain Current vs
10
-2
-2
300
250
200
150
100
50
0
25
50
10
Case Temperature
10
-1
T
NOTES:
DUTY FACTOR: D = t
PEAK T
-1
C
, CASE TEMPERATURE
75
CURRENT LIMITED
BY PACKAGE
J
= P
FOR TEMPERATURES
ABOVE 25
CURRENT AS FOLLOWS:
T
C
I = I
DM
100
= 25
25
x Z
o
C
θJC
10
P
10
o
DM
1
0
C DERATE PEAK
/t
x R
125
2
0
175 - T
θJC
150
www.fairchildsemi.com
t
1
+ T
(
o
C
t
V
C
2
150
C
GS
)
= 10V
10
175
10
1
1