IRFB11N50A Vishay, IRFB11N50A Datasheet

MOSFET N-CH 500V 11A TO-220AB

IRFB11N50A

Manufacturer Part Number

IRFB11N50A

Description

MOSFET N-CH 500V 11A TO-220AB

Manufacturer

Vishay

Datasheets

1.IRFB11N50A.pdf (8 pages)

2.IRFB11N50A.pdf (8 pages)

3.IRFB11N50A.pdf (8 pages)

Specifications of IRFB11N50A

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Standard

Rds On (max) @ Id, Vgs

520 mOhm @ 6.6A, 10V

Drain To Source Voltage (vdss)

500V

Current - Continuous Drain (id) @ 25° C

11A

Vgs(th) (max) @ Id

4V @ 250µA

Gate Charge (qg) @ Vgs

52nC @ 10V

Input Capacitance (ciss) @ Vds

1423pF @ 25V

Power - Max

170W

Mounting Type

Through Hole

Package / Case

TO-220-3 (Straight Leads)

Configuration

Single

Transistor Polarity

N-Channel

Resistance Drain-source Rds (on)

0.52 Ohms

Drain-source Breakdown Voltage

500 V

Gate-source Breakdown Voltage

+/- 30 V

Continuous Drain Current

11 A

Power Dissipation

170 W

Maximum Operating Temperature

+ 150 C

Mounting Style

Through Hole

Minimum Operating Temperature

- 55 C

Lead Free Status / RoHS Status

Contains lead / RoHS non-compliant

Other names

*IRFB11N50A

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

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Current page: 1 of 8
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Applicable Off Line SMPS Topologies:

Absolute Maximum Ratings

Applications

Benefits

www.irf.com

I

I

I

P

V

dv/dt

T

T

Notes

D

D

DM

J

STG

D

GS

@ T

@ T

@T

Two Transistor Forward

Half & Full Bridge

Power Factor Correction Boost

Drive Requirement

dv/dt Ruggedness

Avalanche Voltage and Current

Low Gate Charge Qg results in Simple

Improved Gate, Avalanche and dynamic

Fully Characterized Capacitance and

Switch Mode Power Supply ( SMPS )

Uninterruptable Power Supply

High speed power switching

C

C

C

= 25°C

= 100°C

= 25°C

through

Continuous Drain Current, V

Continuous Drain Current, V

Pulsed Drain Current

Linear Derating Factor

Gate-to-Source Voltage

Peak Diode Recovery dv/dt

Operating Junction and

Storage Temperature Range

Soldering Temperature, for 10 seconds

Mounting torqe, 6-32 or M3 screw

Power Dissipation

are on page 8

Parameter

SMPS MOSFET

GS

GS

@ 10V

@ 10V

V

500V

DSS

300 (1.6mm from case )

HEXFET

10 lbf•in (1.1N•m)

TO-220AB

IRFB11N50A

-55 to + 150

Rds(on) max

Max.

170

± 30

7.0

1.3

6.9

11

44

0.52

®

Power MOSFET

G

D

S

PD- 91809B

Units

W/°C

V/ns

11A

°C

W

A

V

I

D

1

3/30/99

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