IRFB11N50A Vishay, IRFB11N50A Datasheet - Page 8

• Manufacturer Part Number: IRFB11N50A
• Description: MOSFET N-CH 500V 11A TO-220AB
• Manufacturer: Vishay

Specifications of IRFB11N50A

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 520 mOhm @ 6.6A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 11A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 52nC @ 10V
• Input Capacitance (ciss) @ Vds: 1423pF @ 25V
• Power - Max: 170W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.52 Ohms
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 11 A
• Power Dissipation: 170 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRFB11N50A

Package Outline
TO-220AB Outline
Dimensions are shown in millimeters (inches)
TO-220AB
Notes:
Part Marking Information
IRFB11N5OA
8
Repetitive rating; pulse width limited by
IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 221 8371
I
max. junction temperature. ( See fig. 11 )
R
T
Starting T
SD
IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: [phone]
J
G
E X A M P L E :
= 25 , I
150°C
11A, di/dt
IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: [phone]
J
= 25°C, L = 4.5mH
AS
= 11A. (See Figure 12)
TH IS IS A N IR F 1 0 1 0
W ITH A S S E M B L Y
L OT C O D E 9 B 1 M
140A/µs, V
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: [phone]
N O T E S :
1 D IM E N S IO N IN G & T O L E R A N C IN G P E R A N S I Y 1 4 .5 M , 1 9 8 2 .
2 C O N T R O L L IN G D IM E N S IO N : IN C H
1 4 .0 9 ( .5 5 5 )
1 3 .4 7 ( .5 3 0 )
1 5 .2 4 ( .6 0 0 )
1 4 .8 4 ( .5 8 4 )
2 .8 7 (.1 1 3 )
2 .6 2 (.1 0 3 )
3 X
2 .5 4 (.1 0 0 )
IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
DD
http://www.irf.com/
1 .4 0 ( .0 5 5 )
1 .1 5 ( .0 4 5 )
2 X
V
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
(BR)DSS
IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: [phone]
1 0 .5 4 (.4 1 5 )
1 0 .2 9 (.4 0 5 )
1
2
,
3
4
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
3 X
0 .3 6 (.0 1 4 )
6 .4 7 (.2 5 5 )
6 .1 0 (.2 4 0 )
0 .9 3 (.0 3 7 )
0 .6 9 (.0 2 7 )
IN T E R N A T IO N A L
1 .1 5 (.0 4 5 )
4 .0 6 (.1 6 0 )
3 .5 5 (.1 4 0 )
L O T
M IN
Pulse width
C
R E C TIFIE R
A S S E M B L Y
as C
3 .7 8 ( .1 4 9 )
3 .5 4 ( .1 3 9 )
oss
Data and specifications subject to change without notice
L O G O
M
eff. is a fixed capacitance that gives the same charging time
oss
- A -
B
C O D E
while V
A
M
3 O U T L IN E C O N F O R M S T O J E D E C O U T L IN E T O -2 2 0 A B .
4 H E A T S IN K & L E A D M E A S U R E M E N T S D O N O T IN C L U D E B U R R S .
300µs; duty cycle
DS
4 .6 9 ( .1 8 5 )
4 .2 0 ( .1 6 5 )
is rising from 0 to 80% V
IR F 1 0 10
9 B
9 2 4 6
1 M
- B -
1 .3 2 (. 0 5 2 )
1 .2 2 (. 0 4 8 )
2 .9 2 (.1 1 5 )
2 .6 4 (.1 0 4 )
3 X
2%.
0 .5 5 (.0 2 2 )
0 .4 6 (.0 1 8 )
L E A D A S S IG N M E N T S
1 - G A T E
2 - D R A IN
3 - S O U R C E
4 - D R A IN
P A R T N U M B E R
D A TE C O D E
(Y Y W W )
Y Y = Y E A R
W W = W E E K
DSS
www.irf.com
A
3/99