SUM85N15-19-E3 Vishay, SUM85N15-19-E3 Datasheet - Page 2

• Manufacturer Part Number: SUM85N15-19-E3
• Description: MOSFET N-CH 150V 85A D2PAK
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SUM85N15-19-E3

• Transistor Polarity: N-Channel
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 19 mOhm @ 30A, 10V
• Drain To Source Voltage (vdss): 150V
• Current - Continuous Drain (id) @ 25° C: 85A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 110nC @ 10V
• Input Capacitance (ciss) @ Vds: 4750pF @ 25V
• Power - Max: 3.75W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 0.019 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 25 S
• Drain-source Breakdown Voltage: 150 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 85 A
• Power Dissipation: 3750 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: 85A
• Drain Source Voltage Vds: 150V
• On Resistance Rds(on): 19mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 2V
• Power Dissipation Pd: 3.75W
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SUM85N15-19-E3TR

SUM85N15-19
Vishay Siliconix
Notes
a.
b.
c.
www.vishay.com
2
SPECIFICATIONS (T
Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Diode Ratings and Characteristics (T
Continuous Current
Pulsed Current
Forward Voltage
Reverse Recovery Time
Peak Reverse Recovery Current
Reverse Recovery Charge
Pulse test; pulse width v 300 ms, duty cycle v 2%.
Guaranteed by design, not subject to production testing.
Independent of operating temperature.
c
c
b
g
Parameter
a
c
c
c
c
c
a
a
a
J
=25_C UNLESS OTHERWISE NOTED)
Symbol
V
I
RM(REC)
V
r
(BR)DSS
I
DS(on)
DS(on)
t
t
I
I
C
GS(th)
D(on)
C
C
V
Q
Q
d(on)
d(off)
GSS
DSS
DSS
I
Q
Q
g
R
SM
I
t
oss
t
rss
t
SD
iss
S
rr
fs
gs
gd
r
f
g
rr
g
C
V
V
I
V
V
V
V
D
DS
DS
= 25_C)
GS
GS
GS
DS
DS
^ 85 A, V
= 150 V, V
= 150 V, V
I
= 75 V, V
= 10 V, I
= 10 V, I
V
= 0 V, V
F
V
V
V
V
V
V
DS
V
V
DS
DS
= 50 A, di/dt = 100 A/ms
DS
Test Condition
DD
DD
I
DS
GS
DS
F
= 85 A, V
= 0 V, V
= V
= 150 V, V
w 5 V, V
= 75 V, R
= 75 V, R
= 0 V, I
,
b
= 10 V, I
= 15 V, I
GEN
DS
D
D
GS
GS
GS
GS
GS
= 30 A, T
= 30 A, T
= 25 V, f = 1 MHz
, I
= 10 V, R
GS
= 0 V, T
= 0 V, T
D
= 10 V, I
D
GS
GS
D
= 250 mA
D
L
L
= 250 mA
GS
= "20 V
= 30 A
= 0.9 W
= 0.9 W
= 30 A
= 10 V
= 0 V
= 0 V
,
J
J
J
J
= 125_C
= 175_C
D
D
g
= 125_C
= 175_C
= 2.5 W
= 85 A
Min
150
120
0.5
25
2
0.015
Typ
4750
0.52
530
220
170
170
130
1.8
1.0
76
21
26
22
40
8
S-32523—Rev. B, 08-Dec-03
Document Number: 71703
"100
Max
0.019
0.038
0.050
250
110
250
250
180
200
3.0
1.5
1.2
50
35
60
85
12
4
1
Unit
nA
mA
m
pF
nC
mC
ns
ns
ns
W
W
V
V
A
S
A
A
V
A