SUM85N15-19-E3 Vishay, SUM85N15-19-E3 Datasheet - Page 5

• Manufacturer Part Number: SUM85N15-19-E3
• Description: MOSFET N-CH 150V 85A D2PAK
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SUM85N15-19-E3

• Transistor Polarity: N-Channel
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 19 mOhm @ 30A, 10V
• Drain To Source Voltage (vdss): 150V
• Current - Continuous Drain (id) @ 25° C: 85A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 110nC @ 10V
• Input Capacitance (ciss) @ Vds: 4750pF @ 25V
• Power - Max: 3.75W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 0.019 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 25 S
• Drain-source Breakdown Voltage: 150 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 85 A
• Power Dissipation: 3750 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: 85A
• Drain Source Voltage Vds: 150V
• On Resistance Rds(on): 19mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 2V
• Power Dissipation Pd: 3.75W
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SUM85N15-19-E3TR

Document Number: 71703
S-32523—Rev. B, 08-Dec-03
THERMAL RATINGS
0.01
0.1
2
1
10
90
75
60
45
30
15
0
−4
0
0.2
0.1
Single Pulse
Duty Cycle = 0.5
Maximum Avalanche and Drain Current
25
0.02
0.05
T
C
vs. Case Temperature
50
− Ambient Temperature (_C)
75
10
100
−3
Normalized Thermal Transient Impedance, Junction-to-Case
125
150
Square Wave Pulse Duration (sec)
175
10
−2
1000
100
0.1
10
1
0.1
V
DS
1
Single Pulse
10
T
− Drain-to-Source Voltage (V)
Safe Operating Area
by r
C
−1
Limited
= 25_C
DS(on)
10
Vishay Siliconix
SUM85N15-19
100
1 ms
10 ms
100 ms
dc
10 ms
100 ms
www.vishay.com
1
1000
5