IRFBE30 Vishay, IRFBE30 Datasheet - Page 2

• Manufacturer Part Number: IRFBE30
• Description: MOSFET N-CH 800V 4.1A TO-220AB
• Manufacturer: Vishay

Specifications of IRFBE30

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 3 Ohm @ 2.5A, 10V
• Drain To Source Voltage (vdss): 800V
• Current - Continuous Drain (id) @ 25° C: 4.1A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 78nC @ 10V
• Input Capacitance (ciss) @ Vds: 1300pF @ 25V
• Power - Max: 125W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRFBE30

IRFBE30, SiHFBE30
Vishay Siliconix
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %.
www.vishay.com
2
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Ambient
Case-to-Sink, Flat, Greased Surface
Maximum Junction-to-Case (Drain)
SPECIFICATIONS T
PARAMETER
Static
Drain-Source Breakdown Voltage
V
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulsed Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Forward Turn-On Time
DS
Temperature Coefficient
J
a
= 25 °C, unless otherwise noted
SYMBOL
SYMBOL
ΔV
R
V
R
t
t
R
I
I
C
R
V
C
V
GS(th)
DS(on)
C
Q
Q
d(on)
d(off)
I
GSS
DSS
Q
g
Q
L
L
t
DS
I
SM
t
thCS
t
t
on
thJA
thJC
DS
oss
SD
iss
rss
S
rr
fs
gd
gs
r
f
D
S
rr
g
/T
J
Between lead,
6 mm (0.25") from
package and center of
die contact
MOSFET symbol
showing the
integral reverse
p - n junction diode
T
V
V
J
V
R
GS
GS
= 25 °C, I
DS
T
Intrinsic turn-on time is negligible (turn-on is dominated by L
G
J
Reference to 25 °C, I
= 10 V
= 10 V
= 12 Ω, R
= 640 V, V
= 25 °C, I
V
V
V
V
V
TYP.
f = 1.0 MHz, see fig. 5
0.50
TEST CONDITIONS
DD
DS
DS
DS
GS
-
-
= 100 V, I
= 400 V, I
= 800 V, V
F
= V
= 0 V, I
V
V
= 4.1 A, dI/dt = 100 A/µs
V
GS
D
DS
S
GS
GS
GS
I
= 95 Ω, see fig. 10
= 4.1 A, V
D
= ± 20 V
, I
= 25 V,
= 0 V,
= 4.1 A, V
= 0 V, T
see fig. 6 and 13
D
D
D
D
= 250 µA
= 250 µA
GS
I
= 2.5 A
= 4.1 A
D
= 2.5 A
D
= 0 V
GS
= 1 mA
J
G
G
DS
= 125 °C
= 0 V
b
= 400 V,
b
MAX.
D
S
b
S
b
D
1.0
62
b
-
b
MIN.
800
2.0
2.5
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Document Number: 91118
S-81262-Rev. A, 07-Jul-08
TYP.
1300
310
190
480
0.9
4.5
7.5
1.8
12
33
82
30
-
-
-
-
-
-
-
-
-
-
-
-
-
UNIT
°C/W
MAX.
± 100
S
100
500
720
4.0
3.0
9.6
4.1
1.8
2.7
78
45
16
-
-
-
-
-
-
-
-
-
-
-
-
and L
D
UNIT
)
V/°C
nA
µA
nC
nH
µC
pF
ns
ns
Ω
V
V
S
A
V