IRFBE30 Vishay, IRFBE30 Datasheet - Page 5

• Manufacturer Part Number: IRFBE30
• Description: MOSFET N-CH 800V 4.1A TO-220AB
• Manufacturer: Vishay

Specifications of IRFBE30

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 3 Ohm @ 2.5A, 10V
• Drain To Source Voltage (vdss): 800V
• Current - Continuous Drain (id) @ 25° C: 4.1A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 78nC @ 10V
• Input Capacitance (ciss) @ Vds: 1300pF @ 25V
• Power - Max: 125W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRFBE30

Document Number: 91118
S-81262-Rev. A, 07-Jul-08
Fig. 9 - Maximum Drain Current vs. Case Temperature
Vary t
required I
Fig. 12a - Unclamped Inductive Test Circuit
p
to obtain
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R
10 V
G
V
DS
t
p
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
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AS
D.U.T
0.01 Ω
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+
-
V
DD
Fig. 12b - Unclamped Inductive Waveforms
V
I
90 %
10 %
AS
Fig. 10a - Switching Time Test Circuit
Fig. 10b - Switching Time Waveforms
DS
V
V
DS
GS
R
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
G
10 V
V
GS
t
d(on)
IRFBE30, SiHFBE30
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DS
t
r
t
p
D.U.T.
Vishay Siliconix
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D
t
d(off)
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DS
t
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V
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www.vishay.com
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