SIHP22N60S-E3 Vishay, SIHP22N60S-E3 Datasheet - Page 5

• Manufacturer Part Number: SIHP22N60S-E3
• Description: MOSFET N-CH 600V 22A TO220
• Manufacturer: Vishay

Specifications of SIHP22N60S-E3

• Transistor Polarity: N-Channel
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 190 mOhm @ 22A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 22A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 75nC @ 10V
• Input Capacitance (ciss) @ Vds: 2810pF @ 25V
• Power - Max: 250W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Forward Transconductance Gfs (max / Min): 9.4 S
• Gate Charge Qg: 75 nC
• Mounting Style: Through Hole
• Resistance Drain-source Rds (on): 0.16 Ohms
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 22 A
• Power Dissipation: 250 W
• Continuous Drain Current Id: 22A
• Drain Source Voltage Vds: 600V
• On Resistance Rds(on): 160mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 4V
• Operating Temperature Range: -55°C To +150°C
• Transistor Case Style: TO-220
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

Document Number: 91373
S10-1236-Rev. C, 24-May-10
Fig. 9 - Maximum Drain Current vs. Case Temperature
25
20
15
10
5
0
90 %
10 %
Fig. 11a - Switching Time Test Circuit
Fig. 11b - Switching Time Waveforms
25
V
V
DS
GS
R
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
g
10 V
0.01
V
0.1
t
GS
d(on)
50
1
10
V
T
0.02
0.1
0.05
-4
Duty Cycle = 0.5
DS
0.2
C
t
, Case Temperature (°C)
r
Single Pulse
75
D.U.T.
Fig. 11 - Normalized Thermal Transient Impedance, Junction-to-Case
R
100
D
t
d(off)
t
f
125
10
+
-
V
-3
DD
150
Square Wave Pulse Duration (s)
10
-2
Vary t
required I
p
Fig. 12a - Unclamped Inductive Test Circuit
Fig. 12b - Unclamped Inductive Waveforms
Fig. 10 - Drain-to-Source Breakdown Voltage
725
700
675
650
625
600
575
550
V
to obtain
I
AS
DS
- 60 - 40 - 20 0
AS
R
10 V
g
V
T
DS
J ,
0.1
Junction Temperature (°C)
t
p
20 40 60 80 100 120 140 160 180
t
p
I
AS
D.U.T
0.01 Ω
L
Vishay Siliconix
SiHP22N60S
V
DS
V
DD
www.vishay.com
1
+
-
V
DD
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