SIHP22N60S-E3 Vishay, SIHP22N60S-E3 Datasheet - Page 6

• Manufacturer Part Number: SIHP22N60S-E3
• Description: MOSFET N-CH 600V 22A TO220
• Manufacturer: Vishay

Specifications of SIHP22N60S-E3

• Transistor Polarity: N-Channel
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 190 mOhm @ 22A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 22A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 75nC @ 10V
• Input Capacitance (ciss) @ Vds: 2810pF @ 25V
• Power - Max: 250W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Forward Transconductance Gfs (max / Min): 9.4 S
• Gate Charge Qg: 75 nC
• Mounting Style: Through Hole
• Resistance Drain-source Rds (on): 0.16 Ohms
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 22 A
• Power Dissipation: 250 W
• Continuous Drain Current Id: 22A
• Drain Source Voltage Vds: 600V
• On Resistance Rds(on): 160mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 4V
• Operating Temperature Range: -55°C To +150°C
• Transistor Case Style: TO-220
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

SiHP22N60S
Vishay Siliconix
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?91373.
www.vishay.com
6
V
Fig. 13a - Basic Gate Charge Waveform
GS
V
G
Q
GS
Charge
Q
Q
GD
G
Re-applied
voltage
Reverse
recovery
current
+
R
-
g
D.U.T.
Note
a. V
Driver gate drive
D.U.T. l
D.U.T. V
Inductor current
GS
= 5 V for logic level devices
P.W.
SD
DS
waveform
waveform
Fig. 14 - For N-Channel
Peak Diode Recovery dV/dt Test Circuit
Ripple ≤ 5 %
Body diode forward drop
Period
Body diode forward
+
-
• dV/dt controlled by R
• Driver same type as D.U.T.
• I
• D.U.T. - device under test
Diode recovery
SD
current
controlled by duty factor “D”
Circuit layout considerations
dV/dt
• Low stray inductance
• Ground plane
• Low leakage inductance
current transformer
dI/dt
D =
-
g
Period
P.W.
12 V
+
Fig. 13b - Gate Charge Test Circuit
V
GS
Same type as D.U.T.
Current regulator
V
I
V
SD
GS
DD
0.2 µF
= 10 V
+
-
V
DD
Current sampling resistors
a
3 mA
50 kΩ
0.3 µF
I
G
S10-1236-Rev. C, 24-May-10
Document Number: 91373
D.U.T.
I
D
+
-
V
DS