IRFI9640G Vishay, IRFI9640G Datasheet

MOSFET P-CH 200V 6.1A TO220FP

IRFI9640G

Manufacturer Part Number
IRFI9640G
Description
MOSFET P-CH 200V 6.1A TO220FP
Manufacturer
Vishay
Datasheet

Specifications of IRFI9640G

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
500 mOhm @ 3.7A, 10V
Drain To Source Voltage (vdss)
200V
Current - Continuous Drain (id) @ 25° C
6.1A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
44nC @ 10V
Input Capacitance (ciss) @ Vds
1200pF @ 25V
Power - Max
40W
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack (Straight Leads, Isolated), ITO-220AB
Configuration
Single
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
3 Ohms
Drain-source Breakdown Voltage
- 200 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
2 A
Power Dissipation
27 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
*IRFI9640G

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Company
Part Number
Manufacturer
Quantity
Price
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Manufacturer:
IR
Quantity:
12 500
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Part Number:
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Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Starting T
c. I
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91165
S09-0011-Rev. A, 19-Jan-09
PRODUCT SUMMARY
V
R
Q
Q
Q
Configuration
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
ABSOLUTE MAXIMUM RATINGS T
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Linear Derating Factor
Single Pulse Avalanche Energy
Repetitive Avalanche Current
Repetitive Avalanche Energy
Maximum Power Dissipation
Peak Diode Recovery dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
Mounting Torque
DS
DS(on)
g
gs
gd
SD
TO-220 FULLPAK
(Max.) (nC)
(nC)
(nC)
(V)
≤ - 2.0 A, dI/dt ≤ - 250 A/µs, V
(Ω)
J
= 25 °C, L = 51 mH, R
a
G
D
c
a
a
S
V
b
GS
DD
G
= - 10 V
= 25 Ω, I
≤ V
G
DS
P-Channel MOSFET
Single
, T
- 200
3.2
7.3
13
AS
J
≤ 150 °C.
= - 2.0 A (see fig. 12).
S
D
C
Power MOSFET
V
= 25 °C, unless otherwise noted
GS
3.0
at - 10 V
6-32 or M3 screw
T
for 10 s
C
= 25 °C
T
T
C
C
TO-220 FULLPAK
IRFI9640GPbF
SiHFI9640G-E3
IRFI9640G
SiHFI9640G
= 100 °C
= 25 °C
FEATURES
• Isolated Package
• High Voltage Isolation = 2.5 kV
• Sink to Lead Creepage Distance = 4.8 mm
• P-Channel
• Dynamic dV/dt Rating
• Low Thermal Resistance
• Lead (Pb)-free Available
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized
cost-effectiveness.
The TO-220 FULLPAK eliminates the need for additional
insulating hardware in commercial-industrial applications.
The moulding compound used provides a high isolation
capability and a low thermal resistance between the tab and
external heatsink. This isolation is equivalent to using a 100
micron mica barrier with standard TO-220 product. The
FULLPAK is mounted to a heatsink using a single clip or by
a single screw fixing.
f = 60 Hz)
SYMBOL
T
dV/dt
J
V
V
E
E
I
I
P
, T
device
I
DM
AR
DS
GS
AS
AR
D
D
IRFI9610G, SiHFI9610G
stg
design,
- 55 to + 150
LIMIT
- 200
300
± 20
- 2.0
- 1.3
- 8.0
0.22
- 2.0
100
- 11
2.7
1.1
27
10
low
RMS
d
Vishay Siliconix
(t = 60 s;
on-resistance
www.vishay.com
lbf · in
RoHS*
UNIT
W/°C
N · m
COMPLIANT
V/ns
mJ
mJ
°C
W
V
A
A
Available
and
1

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IRFI9640G Summary of contents

Page 1

... D external heatsink. This isolation is equivalent to using a 100 P-Channel MOSFET micron mica barrier with standard TO-220 product. The FULLPAK is mounted to a heatsink using a single clip single screw fixing. TO-220 FULLPAK IRFI9640GPbF SiHFI9640G-E3 IRFI9640G SiHFI9640G = 25 °C, unless otherwise noted ° 100 ° ...

Page 2

... IRFI9610G, SiHFI9610G Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient Maximum Junction-to-Case (Drain) SPECIFICATIONS °C, unless otherwise noted J PARAMETER Static Drain-Source Breakdown Voltage V Temperature Coefficient DS Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current Drain-Source On-State Resistance Forward Transconductance Dynamic ...

Page 3

... S09-0011-Rev. A, 19-Jan-09 -4.5V 10 100 = 25 °C C 2.5 2.0 1.5 -4.5V 1.0 0.5 10 100 = 150 °C Fig Normalized On-Resistance vs. Temperature C IRFI9610G, SiHFI9610G Vishay Siliconix 25° 150° -50V 20µs PULSE WIDTH 0 4.0 5.0 6.0 7.0 8.0 9 Gate-to-Source Voltage (V) Fig Typical Transfer Characteristics -2. -10V ...

Page 4

... IRFI9610G, SiHFI9610G Vishay Siliconix 400 0V MHZ C iss = 350 C rss = oss = 300 250 Ciss 200 150 Coss 100 50 Crss Drain-to-Source Voltage (V) Fig Typical Capacitance vs. Drain-to-Source Voltage -2. -160V 16 VDS= -100V VDS= -40V FOR TEST CIRCUIT SEE FIGURE Total Gate Charge (nC) Fig Typical Gate Charge vs. Gate-to-Source Voltage www ...

Page 5

... Fig. 12a - Unclamped Inductive Test Circuit Document Number: 91165 S09-0011-Rev. A, 19-Jan- 125 150 10 % 0.0001 0.001 0. Rectangular Pulse Duration (sec Fig. 12b - Unclamped Inductive Waveforms IRFI9610G, SiHFI9610G Vishay Siliconix D.U. Pulse width ≤ 1 µs Duty factor ≤ 0.1 % Fig. 10a - Switching Time Test Circuit ...

Page 6

... IRFI9610G, SiHFI9610G Vishay Siliconix Fig. 12c - Maximum Avalanche Energy vs. Drain Current Charge Fig. 13a - Basic Gate Charge Waveform www.vishay.com 6 240 TOP 200 BOTTOM 160 120 100 Starting Junction Temperature (° -0.9A -1.3A -2.0A 125 150 Current regulator Same type as D.U.T. 50 kΩ ...

Page 7

... Inductor current * V Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91165. ...

Page 8

... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...

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