IRFI9640G Vishay, IRFI9640G Datasheet - Page 2

• Manufacturer Part Number: IRFI9640G
• Description: MOSFET P-CH 200V 6.1A TO220FP
• Manufacturer: Vishay

Specifications of IRFI9640G

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 500 mOhm @ 3.7A, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 6.1A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 44nC @ 10V
• Input Capacitance (ciss) @ Vds: 1200pF @ 25V
• Power - Max: 40W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack (Straight Leads, Isolated), ITO-220AB
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 3 Ohms
• Drain-source Breakdown Voltage: - 200 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 2 A
• Power Dissipation: 27 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRFI9640G

IRFI9610G, SiHFI9610G
Vishay Siliconix
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %.
www.vishay.com
2
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
SPECIFICATIONS T
PARAMETER
Static
Drain-Source Breakdown Voltage
V
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulsed Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Forward Turn-On Time
DS
Temperature Coefficient
J
a
= 25 °C, unless otherwise noted
SYMBOL
SYMBOL
ΔV
R
V
t
t
I
I
C
R
V
C
V
R
GS(th)
DS(on)
C
Q
Q
d(on)
d(off)
I
GSS
DSS
Q
g
Q
L
t
DS
L
SM
I
t
t
on
DS
oss
t
SD
thJA
thJC
iss
rss
S
rr
gd
fs
gs
r
f
D
S
g
rr
/T
J
V
V
T
Between lead,
6 mm (0.25") from
package and center of
die contact
MOSFET symbol
showing the
integral reverse
p - n junction diode
J
V
GS
GS
= 25 °C, I
DS
T
Intrinsic turn-on time is negligible (turn-on is dominated by L
J
Reference to 25 °C, I
= - 10 V
= - 10 V
= 25 °C, I
= - 160 V, V
V
V
V
V
R
V
DD
DS
f = 1.0 MHz, see fig. 5
DS
DS
G
TYP.
GS
TEST CONDITIONS
= - 100 V, I
= 24 Ω
-
-
= - 50 V, I
= - 200 V, V
F
= V
= 0 V, I
V
V
= - 2.0 A, dI/dt = 100 A/µs
see fig. 10
V
GS
DS
I
S
D
GS
GS
= - 2.0 A, V
= - 2.0 A, V
GS
, I
= ± 20 V
= - 25 V,
,
V
= 0 V,
see fig. 6 and 13
D
D
= 0 V, T
GS
= - 250 µA
D
= - 250 µA
I
D
D
= - 1.2 A
= - 10 V,
GS
= - 2.0 A,
= - 1.2 A
b
D
= 0 V
= - 1 mA
GS
DS
J
G
G
= 125 °C
= 0 V
= - 160 V,
b
b
MAX.
D
S
b
b
D
S
4.6
65
b
- 200
MIN.
- 2.0
0.7
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
S09-0011-Rev. A, 19-Jan-09
Document Number: 91165
- 0.22
TYP.
180
130
700
4.5
7.5
66
12
12
17
19
15
-
-
-
-
-
-
-
-
-
-
-
-
-
UNIT
°C/W
± 100
MAX.
- 100
- 500
1050
- 4.0
- 2.0
- 8.0
- 5.8
S
200
3.0
3.2
7.3
13
-
-
-
-
-
-
-
-
-
-
-
-
and L
D
UNIT
)
V/°C
nA
µA
nC
nH
µC
pF
ns
ns
V
V
Ω
S
A
V