FDA50N50 Fairchild Semiconductor, FDA50N50 Datasheet - Page 6

• Manufacturer Part Number: FDA50N50
• Description: MOSFET N-CH 500V 48A TO-3P
• Manufacturer: Fairchild Semiconductor
• Series: UniFET™r

Specifications of FDA50N50

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 105 mOhm @ 24A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 48A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 137nC @ 10V
• Input Capacitance (ciss) @ Vds: 6460pF @ 25V
• Power - Max: 625W
• Mounting Type: Through Hole
• Package / Case: TO-3PN-3
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.105 Ohms
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 48 A
• Power Dissipation: 625 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Mechanical Dimensions
TO-247AB
Dimensions in Millimeters
6
www.fairchildsemi.com
FDH50N50_F133 / FDA50N50 Rev. A