HUF75852G3 Fairchild Semiconductor, HUF75852G3 Datasheet - Page 2

• Manufacturer Part Number: HUF75852G3
• Description: MOSFET N-CH 150V 75A TO-247
• Manufacturer: Fairchild Semiconductor
• Series: UltraFET™r

Specifications of HUF75852G3

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 16 mOhm @ 75A, 10V
• Drain To Source Voltage (vdss): 150V
• Current - Continuous Drain (id) @ 25° C: 75A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 480nC @ 20V
• Input Capacitance (ciss) @ Vds: 7690pF @ 25V
• Power - Max: 500W
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.016 Ohms
• Drain-source Breakdown Voltage: 150 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 75 A
• Power Dissipation: 500 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Device #1 FGH50N6S2D
Package:
#Leads:
Environment Stress Detail:
Stress
ACLV
PRCL
TMCL1
Device #2 HGTG27N120BN
Package:
#Leads:
Environment Stress Detail:
Stress
ACLV
PRCL
TMCL1
Device #3 HUF75344G3
Package:
#Leads:
Environment Stress Detail:
Stress
ACLV
PRCL
P/C
P/C
P/C
Standard
JESD22-A102 100%RH, 121C 96
MIL-
STD-750-1036
JESD22-A104 -65C, 150C
Standard
JESD22-A102 100%RH, 121C 96
MIL-
STD-750-1036
JESD22-A104 -65C, 150C
Standard
JESD22-A102 100%RH, 121C 96
MIL-
Qualification Stress Test and Sample Size Detail
Conditions
Delta 100C, 5
Min on/off
Conditions
Delta 100C, 5
Min on/off
Conditions
Delta 100C, 5
Readpoints
TP1
1000
200
Readpoints
TP1
1000
200
Readpoints
TP1
1000
TP2
5000
500
TP2
5000
500
TP2
5000
Samples
A
77
77
77
Samples
A
77
77
77
Samples
A
77
77
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