HUF75852G3 Fairchild Semiconductor, HUF75852G3 Datasheet
HUF75852G3
Specifications of HUF75852G3
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HUF75852G3 Summary of contents
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... Peak Current vs Pulse Width Curve • UIS Rating Curve Ordering Information PART NUMBER HUF75852G3 o C, Unless Otherwise Specified HUF75852G3 = 0.016 V 10V GS PACKAGE BRAND TO-247 75852G HUF75852G3 150 DSS 150 DGR Figure 4 DM Figures 6, 14, 15 500 D 3. -55 to 175 J STG 300 L 260 pkg HUF75852G3 Rev. B UNITS ...
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... 75A, dI /dt = 100A MIN TYP 150 - - - 0.013 - - - - - - - 22 - 151 - 82 - 107 - - = 75V, - 400 - 215 = 1.0mA - 7690 - 1650 - 535 MIN TYP - - - - - - - - MAX UNITS - 250 A 100 0.016 ¾ o 0.30 C C/W 260 285 ns 480 nC 260 nC 17 MAX UNITS 1.25 V 1.00 V 260 ns 1830 nC HUF75852G3 Rev. B ...
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... C) FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs NOTES: DUTY FACTOR PEAK RECTANGULAR PULSE DURATION ( PULSE WIDTH (s) FIGURE 4. PEAK CURRENT CAPABILIT 10V 100 125 150 CASE TEMPERATURE ( C) C CASE TEMPERATURE FOR TEMPERATURES o ABOVE 25 C DERATE PEAK CURRENT AS FOLLOWS: 175 - 150 - HUF75852G3 Rev. B 175 ...
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... AV AS STARTING T o STARTING T = 150 0.01 0 TIME IN AVALANCHE (ms 20V GS 50 PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX DRAIN TO SOURCE VOLTAGE (V) DS FIGURE 8. SATURATION CHARACTERISTICS 1 1.0 0.8 0.6 0.4 -80 - JUNCTION TEMPERATURE ( J JUNCTION TEMPERATURE - +1] DSS 10V = 250 120 160 200 o C) HUF75852G3 Rev. B ...
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... Fairchild Semiconductor Corporation (Continued) 20000 10000 1000 80 120 160 200 o C) FIGURE 12. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE 75V WAVEFORMS IN DESCENDING ORDER 100 150 Q , GATE CHARGE (nC RSS OSS 0V 1MHz GS 100 0.1 1 DRAIN TO SOURCE VOLTAGE ( 75A 30A D 200 250 ISS GS GD 100 HUF75852G3 Rev. B ...
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... FIGURE 18. SWITCHING TIME TEST CIRCUIT ©2001 Fairchild Semiconductor Corporation DUT 0. DUT g(REF DUT DSS FIGURE 15. UNCLAMPED ENERGY WAVEFORMS Q g(TOT g(10 10V g(TH FIGURE 17. GATE CHARGE WAVEFORMS d(ON 90% 10% 50% PULSE WIDTH FIGURE 19. SWITCHING TIME WAVEFORM 20V GS t OFF d(OFF 90% 10% 90% 50% HUF75852G3 Rev. B ...
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... DPLCAP 10 RSLC2 - 6 ESG 8 EVTHRES + + - 19 LGATE EVTEMP 8 RGATE + RLGATE CIN S1A S2A S1B S2B EGS EDS 0TRS2 = 0) LDRAIN 5 RLDRAIN RSLC1 DBREAK ESLC DBODY RDRAIN 18 EBREAK - 16 21 MWEAK MMED MSTRO LSOURCE 8 7 RSOURCE RLSOURCE RBREAK 17 18 RVTEMP VBAT RVTHRES DRAIN 2 SOURCE 3 HUF75852G3 Rev. B ...
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... LGATE EVTEMP RGATE GATE + RLGATE S1A S2A S1B S2B EGS RSLC1 RDBREAK 51 72 ISCL DBREAK 50 71 RDRAIN MWEAK 8 EBREAK MMED + MSTRO 17 18 CIN - 8 7 RSOURCE RLSOURCE RBREAK RVTEMP EDS + RVTHRES LDRAIN DRAIN 2 RLDRAIN RDBODY DBODY LSOURCE SOURCE 3 VBAT HUF75852G3 Rev. B ...
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... Fairchild Semiconductor Corporation JUNCTION th RTHERM1 CTHERM1 6 RTHERM2 CTHERM2 5 RTHERM3 CTHERM3 4 RTHERM4 CTHERM4 3 RTHERM5 ...
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... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST Bottomless™ FASTr™ FRFET™ CoolFET™ GlobalOptoisolator™ CROSSVOLT™ GTO™ DenseTrench™ ...