IRFIB5N65A Vishay, IRFIB5N65A Datasheet - Page 3

• Manufacturer Part Number: IRFIB5N65A
• Description: MOSFET N-CH 650V 5.1A TO220FP
• Manufacturer: Vishay
• Series: HEXFET®r

Specifications of IRFIB5N65A

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 930 mOhm @ 3.1A, 10V
• Drain To Source Voltage (vdss): 650V
• Current - Continuous Drain (id) @ 25° C: 5.1A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 48nC @ 10V
• Input Capacitance (ciss) @ Vds: 1417pF @ 25V
• Power - Max: 60W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack (Straight Leads, Isolated), ITO-220AB
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.93 Ohms
• Drain-source Breakdown Voltage: 650 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 5.1 A
• Power Dissipation: 60 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRFIB5N65A

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100
100
Fig 3. Typical Transfer Characteristics
0.1
0.1
Fig 1. Typical Output Characteristics
10
10
1
1
0.1
4.0
T = 150 C
TOP
BOTTOM
J
V
V
DS
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
5.0
GS
°
, Drain-to-Source Voltage (V)
, Gate-to-Source Voltage (V)
T = 25 C
1
J
6.0
4.5V
°
20µs PULSE WIDTH
T = 25 C
V
20µs PULSE WIDTH
7.0
J
DS
10
= 100V
°
8.0
100
9.0
100
0.1
Fig 2. Typical Output Characteristics
10
3.0
2.5
2.0
1.5
1.0
0.5
0.0
1
Fig 4. Normalized On-Resistance
-60 -40 -20
1
TOP
BOTTOM
I =
D
V
5.2A
DS
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
T , Junction Temperature ( C)
Vs. Temperature
J
, Drain-to-Source Voltage (V)
0
IRFIB5N65A
20
40
10
60
20µs PULSE WIDTH
T = 150 C
J
4.5V
80 100 120 140 160
°
V
°
GS
=
10V
3
100