IRFIB5N65A Vishay, IRFIB5N65A Datasheet - Page 8

• Manufacturer Part Number: IRFIB5N65A
• Description: MOSFET N-CH 650V 5.1A TO220FP
• Manufacturer: Vishay
• Series: HEXFET®r

Specifications of IRFIB5N65A

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 930 mOhm @ 3.1A, 10V
• Drain To Source Voltage (vdss): 650V
• Current - Continuous Drain (id) @ 25° C: 5.1A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 48nC @ 10V
• Input Capacitance (ciss) @ Vds: 1417pF @ 25V
• Power - Max: 60W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack (Straight Leads, Isolated), ITO-220AB
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.93 Ohms
• Drain-source Breakdown Voltage: 650 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 5.1 A
• Power Dissipation: 60 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRFIB5N65A

TO-220 Full-Pak Package Outline
TO-220 Full-Pak Part Marking Information
IRFIB5N65A
Dimensions are shown in millimeters (inches)
Notes:
IR EUROPEAN REGIONAL CENTRE: 439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel: ++ 44 (0)20 8645 8000
8
Repetitive rating; pulse width limited by
I
max. junction temperature. (See fig. 11)
R
T
Starting T
SD
J
G
= 25 , I
IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 (0)838 4630
150°C
5.2A, di/dt
J
= 25°C, L = 24mH
AS
= 5.2A. (See Figure 12)
IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 171 Tel: [phone]
E X AM P LE : TH IS IS A N IR F I8 40 G
1 6.0 0 ( .63 0)
1 5.8 0 ( .62 2)
1 3.7 0 ( .54 0)
1 3.5 0 ( .53 0)
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: [phone]
3X
90A/µs, V
2 .54 (.1 00 )
IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673 Tel: [phone]
1 .4 0 (.05 5)
1 .0 5 (.04 2)
2X
DD
1 0.60 (.4 17 )
1 0.40 (.4 09 )
1
W IT H AS S E M B L Y
L O T C O D E E 40 1
2
V
(BR)DSS
3
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 (0) 6172 96590
3X
1.1 5 ( .04 5)
0.9 0 ( .0 35)
0.7 0 ( .0 28)
0.2 5 ( .01 0)
M IN .
3 .70 (.14 5)
3 .20 (.12 6)
3.30 (.1 30 )
3.10 (.1 22 )
,
IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: [phone]
ø
3 .40 (.13 3)
3 .10 (.12 3)
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 011 451 0111
- A -
- B -
M
A M
Pulse width
C
as C
oss
t=60s, f=60Hz
B
7.1 0 ( .28 0)
6.7 0 ( .26 3)
IN T E R N A TIO N A L
L O T
eff. is a fixed capacitance that gives the same charging time
oss
4.8 0 ( .189 )
4.6 0 ( .181 )
A S S E M B L Y
R E C T IF IE R
Data and specifications subject to change without notice. 6/00
while V
L O G O
C O D E
300µs; duty cycle
DS
is rising from 0 to 80% V
2 .85 ( .11 2)
2 .65 ( .10 4)
2.8 0 ( .11 0)
2.6 0 ( .10 2)
3 X
IR F I8 4 0 G
E 40 1 9 2 4 5
0.48 ( .01 9)
0.44 ( .01 7)
N O TE S :
1 D IM E N S IO N IN G & TO L E R A N C IN G
2 C O N TR O LL IN G D IM E N S IO N : IN C H .
P E R A N S I Y 14.5 M , 1 9 82
LE A D A S S IG N M E N TS
2%.
M IN IM U M C R E E P A G E
D IS T A N C E B E TW E E N
A -B -C -D = 4 .80 (.1 89)
1 - G A T E
2 - D R A IN
3 - S O U R C E
P A R T N U M B E R
D A T E C O D E
(YY W W )
Y Y = Y E A R
W W = W E E K
A
DSS
C
B
D
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A