IRFP460APBF Vishay, IRFP460APBF Datasheet

MOSFET N-CH 500V 20A TO-247AC

IRFP460APBF

Manufacturer Part Number
IRFP460APBF
Description
MOSFET N-CH 500V 20A TO-247AC
Manufacturer
Vishay
Type
Power MOSFETr
Datasheets

Specifications of IRFP460APBF

Transistor Polarity
N-Channel
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
270 mOhm @ 12A, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
20A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
105nC @ 10V
Input Capacitance (ciss) @ Vds
3100pF @ 25V
Power - Max
280W
Mounting Type
Through Hole
Package / Case
TO-247-3 (Straight Leads), TO-247AC
Gate Charge Qg
105 nC
Minimum Operating Temperature
- 55 C
Configuration
Single
Resistance Drain-source Rds (on)
0.27 Ohm @ 10 V
Forward Transconductance Gfs (max / Min)
11 S
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
20 A
Power Dissipation
280000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Continuous Drain Current Id
20A
Drain Source Voltage Vds
500V
On Resistance Rds(on)
270mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
4V
Number Of Elements
1
Polarity
N
Channel Mode
Enhancement
Drain-source On-res
0.27Ohm
Drain-source On-volt
500V
Gate-source Voltage (max)
±30V
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Through Hole
Pin Count
3 +Tab
Package Type
TO-247AC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
*IRFP460APBF

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRFP460APBF
Manufacturer:
HITACHI
Quantity:
1 000
Part Number:
IRFP460APBF
Manufacturer:
IR
Quantity:
1 500
Part Number:
IRFP460APBF
Manufacturer:
VISHAY
Quantity:
150
Part Number:
IRFP460APBF
Manufacturer:
IR
Quantity:
20 000
Part Number:
IRFP460APBF
0
Company:
Part Number:
IRFP460APBF
Quantity:
2 400
Company:
Part Number:
IRFP460APBF
Quantity:
8 000
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Starting T
c. I
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91234
S09-1284-Rev. B, 13-Jul-09
PRODUCT SUMMARY
V
R
Q
Q
Q
Configuration
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
ABSOLUTE MAXIMUM RATINGS T
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Linear Derating Factor
Single Pulse Avalanche Energy
Repetitive Avalanche Current
Repetitive Avalanche Energy
Maximum Power Dissipation
Peak Diode Recovery dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
Mounting Torque
DS
DS(on)
g
gs
gd
SD
(Max.) (nC)
(nC)
(nC)
(V)
≤ 20 A, dI/dt ≤ 125 A/µs, V
(Ω)
TO-247
J
= 25 °C, L = 4.3 mH, R
G
a
D
S
c
a
a
DD
b
V
GS
≤ V
g
= 10 V
= 25 Ω, I
DS
G
, T
N-Channel MOSFET
J
Single
≤ 150 °C.
500
105
26
42
AS
= 20 A (see fig. 12).
D
S
C
Power MOSFET
0.27
= 25 °C, unless otherwise noted
V
GS
6-32 or M3 screw
at 10 V
T
C
for 10 s
= 25 °C
T
T
C
C
TO-247
IRFP460APbF
SiHFP460A-E3
IRFP460A
SiHFP460A
= 100 °C
= 25 °C
FEATURES
• Low Gate Charge Q
• Improved Gate, Avalanche and Dynamic dV/dt
• Fully Characterized Capacitance and Avalanche Voltage
• Effective C
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Switch Mode Power Supply (SMPS)
• Uninterruptable Power Supply
• High Speed Power Switching
TYPICAL SMPS TOPOLOGIES
• Full Bridge
• PFC Boost
Requirement
Ruggedness
and Current
SYMBOL
T
dV/dt
oss
J
V
V
E
E
I
I
P
, T
I
DM
AR
DS
GS
AS
AR
D
D
stg
Specified
IRFP460A, SiHFP460A
g
Results in Simple Drive
- 55 to + 150
LIMIT
300
± 30
500
960
280
2.2
3.8
1.1
20
13
80
20
28
10
Vishay Siliconix
d
www.vishay.com
lbf · in
UNIT
W/°C
N · m
V/ns
RoHS*
COMPLIANT
mJ
mJ
°C
W
V
A
A
Available
1

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IRFP460APBF Summary of contents

Page 1

... Compliant to RoHS Directive 2002/95/EC D APPLICATIONS • Switch Mode Power Supply (SMPS) • Uninterruptable Power Supply • High Speed Power Switching TYPICAL SMPS TOPOLOGIES • Full Bridge S • PFC Boost N-Channel MOSFET TO-247 IRFP460APbF SiHFP460A-E3 IRFP460A SiHFP460A = 25 °C, unless otherwise noted ° 100 ° ...

Page 2

... IRFP460A, SiHFP460A Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient Case-to-Sink, Flat, Greased Surface Maximum Junction-to-Case (Drain) SPECIFICATIONS °C, unless otherwise noted J PARAMETER Static Drain-Source Breakdown Voltage V Temperature Coefficient DS Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current Drain-Source On-State Resistance ...

Page 3

... Fig Typical Output Characteristics Document Number: 91234 S09-1284-Rev. B, 13-Jul-09 4 µs Pulse Width ° 91234_03 4 µs Pulse Width T = 150 ° 91234_04 IRFP460A, SiHFP460A Vishay Siliconix 2 10 ° 150 C 10 ° µs Pulse Width 0.1 4.0 5.0 6.0 7.0 8.0 V Gate-to-Source Voltage ( Fig ...

Page 4

... IRFP460A, SiHFP460A Vishay Siliconix MHz iss rss oss Drain-to-Source Voltage ( 91234_05 Fig Typical Capacitance vs. Drain-to-Source Voltage 250 100 Total Gate Charge (nC) 91234_06 G Fig Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com Shorted iss C oss C rss 91234_07 Fig Typical Source-Drain Diode Forward Voltage V = 400 V ...

Page 5

... Fig. 12a - Unclamped Inductive Test Circuit Document Number: 91234 S09-1284-Rev. B, 13-Jul-09 125 150 Single Pulse (Thermal Response Rectangular Pulse Duration ( Driver + - IRFP460A, SiHFP460A Vishay Siliconix D.U. Pulse width ≤ 1 µs Duty factor ≤ 0.1 % Fig. 10a - Switching Time Test Circuit ...

Page 6

... IRFP460A, SiHFP460A Vishay Siliconix 2400 2000 1600 1200 800 400 100 Starting T , Junction Temperature (°C) 91234_12c J Fig. 12c - Maximum Avalanche Energy vs. Drain Current Charge Fig. 13a - Basic Gate Charge Waveform www.vishay.com 6 620 I D Top 8 Bottom 20 A 600 580 560 540 125 ...

Page 7

... V GS Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91234. Document Number: 91234 S09-1284-Rev ...

Page 8

... L 0.065 0.093 L1 0.102 0.135 N 0.102 0.133 Ø P 0.015 0.034 Ø P1 0.015 0.030 Q 0.776 0.815 R 0.515 - S Package Information Vishay Siliconix A 7 ØP (Datum B) Ø Ø Thermal pad View (b1, b3, b5) Planting Base metal (c) c1 (b, b2, b4) ...

Page 9

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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