HUF75652G3 Fairchild Semiconductor, HUF75652G3 Datasheet
HUF75652G3
Specifications of HUF75652G3
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HUF75652G3 Summary of contents
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... PART NUMBER HUF75652G3 NOTE: When ordering, use the entire part number Unless Otherwise Specified HUF75652G3 = 0.008 10V V GS PACKAGE BRAND TO-247 75652G HUF75652G3 100 DSS 100 DGR Figure 4 DM Figure 6 515 D 3. -55 to 175 J STG 300 L 260 pkg HUF75652G3 Rev. B UNITS ...
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... 75A, dI /dt = 100A MIN TYP 100 - - - 0.0067 - - - - 10V 2 18.5 - 195 - 80 - 190 - - = 50V, - 393 - 211 = 1.0mA - 7585 - 2345 - 630 MIN TYP - - - - - - - - MAX UNITS - 250 A 100 0.008 o 0.29 C C/W 320 410 ns 475 nC 255 nC 16 MAX UNITS 1.25 V 1.00 V 150 ns 490 nC HUF75652G3 Rev. B ...
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... C) FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT RECTANGULAR PULSE DURATION ( PULSE WIDTH (s) FIGURE 4. PEAK CURRENT CAPABILITY V = 10V 100 125 150 CASE TEMPERATURE ( C) C CASE TEMPERATURE NOTES: DUTY FACTOR PEAK FOR TEMPERATURES o ABOVE 25 C DERATE PEAK CURRENT AS FOLLOWS: 175 - 150 - HUF75652G3 Rev. B 175 ...
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... TIME IN AVALANCHE (ms) AV CAPABILITY 200 20V 10V GS GS 150 100 50 PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX DRAIN TO SOURCE VOLTAGE (V) DS FIGURE 8. SATURATION CHARACTERISTICS 1 1.0 0.8 0.6 0.4 -80 - JUNCTION TEMPERATURE ( J JUNCTION TEMPERATURE - +1] DSS = 250 120 160 200 o C) HUF75652G3 Rev. B ...
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... FIGURE 12. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE 50V WAVEFORMS IN DESCENDING ORDER 100 150 Q , GATE CHARGE (nC) g NOTE: Refer to Fairchild Application Notes AN7254 and AN7260. 20000 10000 C C RSS GD 1000 OSS 0V 1MHz GS 100 0.1 1 DRAIN TO SOURCE VOLTAGE ( 75A 35A D 200 250 ISS 100 HUF75652G3 Rev. B ...
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... FIGURE 18. SWITCHING TIME TEST CIRCUIT ©2001 Fairchild Semiconductor Corporation DUT 0. DUT g(REF DUT DSS FIGURE 15. UNCLAMPED ENERGY WAVEFORMS Q g(TOT g(10 10V g(TH FIGURE 17. GATE CHARGE WAVEFORMS d(ON 90% 10% 50% PULSE WIDTH FIGURE 19. SWITCHING TIME WAVEFORM 20V GS t OFF d(OFF 90% 10% 90% 50% HUF75652G3 Rev. B ...
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... Fairchild Semiconductor Corporation DPLCAP 10 RSLC2 - 6 ESG 8 EVTHRES + - + 19 LGATE EVTEMP 8 RGATE - + RLGATE CIN S1A S2A S1B S2B EGS EDS LDRAIN 5 RLDRAIN RSLC1 DBREAK ESLC DBODY RDRAIN 18 EBREAK - 16 21 MWEAK MMED MSTRO LSOURCE 8 7 RSOURCE RLSOURCE RBREAK 17 18 RVTEMP VBAT RVTHRES DRAIN 2 SOURCE 3 HUF75652G3 Rev. B ...
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... ESG 8 EVTHRES + + LGATE EVTEMP GATE RGATE - RLGATE S1A S2A S1B S2B EGS RSLC1 RDBREAK 51 72 ISCL DBREAK 50 71 RDRAIN MWEAK 8 EBREAK MMED + MSTRO CIN 8 7 RSOURCE RLSOURCE RBREAK RVTEMP EDS + RVTHRES LDRAIN DRAIN 2 RLDRAIN RDBODY DBODY LSOURCE SOURCE 3 VBAT HUF75652G3 Rev. B ...
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... Fairchild Semiconductor Corporation JUNCTION th RTHERM1 CTHERM1 6 RTHERM2 CTHERM2 5 RTHERM3 CTHERM3 4 RTHERM4 CTHERM4 3 RTHERM5 CTHERM5 2 RTHERM6 CTHERM6 tl CASE HUF75652G3 Rev. B ...
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... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST Bottomless™ FASTr™ FRFET™ CoolFET™ GlobalOptoisolator™ CROSSVOLT™ GTO™ DenseTrench™ ...