HUF75652G3 Fairchild Semiconductor, HUF75652G3 Datasheet - Page 7

• Manufacturer Part Number: HUF75652G3
• Description: MOSFET N-CH 100V 75A TO-247
• Manufacturer: Fairchild Semiconductor
• Series: UltraFET™r
• Type: Power MOSFETr

Specifications of HUF75652G3

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 8 mOhm @ 75A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 75A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 475nC @ 20V
• Input Capacitance (ciss) @ Vds: 7585pF @ 25V
• Power - Max: 515W
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.008Ohm
• Drain-source On-volt: 100V
• Gate-source Voltage (max): ±20V
• Drain Current (max): 75A
• Power Dissipation: 515W
• Output Power (max): Not RequiredW
• Frequency (max): Not RequiredMHz
• Noise Figure: Not RequireddB
• Power Gain: Not RequireddB
• Drain Efficiency: Not Required%
• Operating Temp Range: -55C to 175C
• Operating Temperature Classification: Military
• Mounting: Through Hole
• Pin Count: 3 +Tab
• Package Type: TO-247
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.008 Ohms
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 75 A
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

PSPICE Electrical Model
.SUBCKT HUF75652 2 1 3 ;
CA 12 8 11.0e-9
CB 15 14 11.4e-9
CIN 6 8 6.95e-9
DBODY 7 5 DBODYMOD
DBREAK 5 11 DBREAKMOD
DPLCAP 10 5 DPLCAPMOD
EBREAK 11 7 17 18 117.5
EDS 14 8 5 8 1
EGS 13 8 6 8 1
ESG 6 10 6 8 1
EVTHRES 6 21 19 8 1
EVTEMP 20 6 18 22 1
IT 8 17 1
LDRAIN 2 5 1.0e-9
LGATE 1 9 5.74e-9
LSOURCE 3 7 4.65e-9
MMED 16 6 8 8 MMEDMOD
MSTRO 16 6 8 8 MSTROMOD
MWEAK 16 21 8 8 MWEAKMOD
RBREAK 17 18 RBREAKMOD 1
RDRAIN 50 16 RDRAINMOD 2.80e-3
RGATE 9 20 0.85
RLDRAIN 2 5 10
RLGATE 1 9 57.4
RLSOURCE 3 7 46.5
RSLC1 5 51 RSLCMOD 1e-6
RSLC2 5 50 1e3
RSOURCE 8 7 RSOURCEMOD 2.50e-3
RVTHRES 22 8 RVTHRESMOD 1
RVTEMP 18 19 RVTEMPMOD 1
S1A 6 12 13 8 S1AMOD
S1B 13 12 13 8 S1BMOD
S2A 6 15 14 13 S2AMOD
S2B 13 15 14 13 S2BMOD
VBAT 22 19 DC 1
ESLC 51 50 VALUE={(V(5,51)/ABS(V(5,51)))*(PWR(V(5,51)/(1e-6*455),2))}
.MODEL DBODYMOD D (IS = 6.55e-12 IKF = 30 RS = 1.69e-3 TRS1 = 1.95e-3 TRS2 = 1.05e-6 CJO = 8.71e-9 TT = 7.81e-8 M = 0.50)
.MODEL DBREAKMOD D (RS = 1.45e- 1TRS1 = 1.02e- 4TRS2 = 1.11e-7)
.MODEL DPLCAPMOD D (CJO = 1.00e- 8IS = 1e-3 0N = 1 M = 0.85)
.MODEL MMEDMOD NMOS (VTO = 2.91 KP = 6.50 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u RG = 0.85)
.MODEL MSTROMOD NMOS (VTO = 3.37 KP = 205 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u)
.MODEL MWEAKMOD NMOS (VTO = 2.56 KP = 0.10 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u RG = 8.5 )
.MODEL RBREAKMOD RES (TC1 = 1.09e- 3TC2 = 1.04e-7)
.MODEL RDRAINMOD RES (TC1 = 1.38e-2 TC2 = 3.75e-5)
.MODEL RSLCMOD RES (TC1 = 1.05e-4 TC2 = 2.13e-7)
.MODEL RSOURCEMOD RES (TC1 = 0 TC2 = 0)
.MODEL RVTHRESMOD RES (TC1 = -2.92e-3 TC2 = -1.48e-5)
.MODEL RVTEMPMOD RES (TC1 = -3.0e- 3TC2 = 1.21e-6)
.MODEL S1AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -5.0 VOFF= -3.0)
.MODEL S1BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -3.0 VOFF= -5.0)
.MODEL S2AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -2.0 VOFF= 0.0)
.MODEL S2BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = 0.0 VOFF= -2.0)
.ENDS
NOTE: For further discussion of the PSPICE model, consult A New PSPICE Sub-Circuit for the Power MOSFET Featuring Global
Temperature Options; IEEE Power Electronics Specialist Conference Records, 1991, written by William J. Hepp and C. Frank Wheatley.
©2001 Fairchild Semiconductor Corporation
GATE
1
rev 11 May 1999
RLGATE
LGATE
9
RGATE
CA
12
20
+
EVTEMP
S1A
S1B
ESG
18
22
EGS
13
8
+
-
-
13
6
8
10
+
+
-
-
14
13
6
8
6
RSLC2
S2A
S2B
DPLCAP
EVTHRES
+
EDS
19
8
15
CB
CIN
-
+
-
5
8
51
5
5
MSTRO
+
-
14
51
21
RDRAIN
RSLC1
50
ESLC
16
8
MMED
8
EBREAK
IT
DBREAK
RSOURCE
17
MWEAK
RVTHRES
RBREAK
11
+
-
17
18
7
+
-
18
22
RVTEMP
19
RLSOURCE
DBODY
LSOURCE
VBAT
RLDRAIN
LDRAIN
HUF75652G3 Rev. B
SOURCE
DRAIN
2
3