IRFP360 Vishay, IRFP360 Datasheet - Page 6

• Manufacturer Part Number: IRFP360
• Description: MOSFET N-CH 400V 23A TO-247AC
• Manufacturer: Vishay
• Series: HEXFET®r

Specifications of IRFP360

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 200 mOhm @ 14A, 10V
• Drain To Source Voltage (vdss): 400V
• Current - Continuous Drain (id) @ 25° C: 23A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 210nC @ 10V
• Input Capacitance (ciss) @ Vds: 4500pF @ 25V
• Power - Max: 280W
• Mounting Type: Through Hole
• Package / Case: TO-247-3 (Straight Leads), TO-247AC
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.2 Ohms
• Drain-source Breakdown Voltage: 400 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 23 A
• Power Dissipation: 280 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRFP360

IRFP360, SiHFP360
Vishay Siliconix
www.vishay.com
6
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
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Fig. 12a - Unclamped Inductive Test Circuit
to obtain
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Fig. 13a - Basic Gate Charge Waveform
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10 V
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Charge
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D.U.T.
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Fig. 12c - Maximum Avalanche Energy vs. Drain Current
This datasheet is subject to change without notice.
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Fig. 12b - Unclamped Inductive Waveforms
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Fig. 13b - Gate Charge Test Circuit
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Same type as D.U.T.
Current regulator
0.2 µF
Current sampling resistors
3 mA
50 kΩ
0.3 µF
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S11-0447-Rev. B, 14-Mar-11
www.vishay.com/doc?91000
Document Number: 90292
D.U.T.
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