IRFP23N50L Vishay, IRFP23N50L Datasheet

MOSFET N-CH 500V 23A TO-247AC

IRFP23N50L

Manufacturer Part Number

IRFP23N50L

Description

MOSFET N-CH 500V 23A TO-247AC

Manufacturer

Vishay

Datasheets

1.IRFP23N50L.pdf (8 pages)

2.IRFP23N50L.pdf (9 pages)

3.IRFP23N50L.pdf (9 pages)

Specifications of IRFP23N50L

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Standard

Rds On (max) @ Id, Vgs

235 mOhm @ 14A, 10V

Drain To Source Voltage (vdss)

500V

Current - Continuous Drain (id) @ 25° C

23A

Vgs(th) (max) @ Id

5V @ 250µA

Gate Charge (qg) @ Vgs

150nC @ 10V

Input Capacitance (ciss) @ Vds

3600pF @ 25V

Power - Max

370W

Mounting Type

Through Hole

Package / Case

TO-247-3 (Straight Leads), TO-247AC

Configuration

Single

Transistor Polarity

N-Channel

Resistance Drain-source Rds (on)

0.235 Ohms

Drain-source Breakdown Voltage

500 V

Gate-source Breakdown Voltage

+/- 30 V

Continuous Drain Current

23 A

Power Dissipation

370 W

Maximum Operating Temperature

+ 150 C

Mounting Style

Through Hole

Minimum Operating Temperature

- 55 C

Lead Free Status / RoHS Status

Contains lead / RoHS non-compliant

Other names

*IRFP23N50L

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

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Part Number:

IRFP23N50L

Manufacturer:

IR

Quantity:

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Company:

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Part Number:

IRFP23N50L

Manufacturer:

IR

Quantity:

12 500

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Part Number:

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Manufacturer:

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Quantity:

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Company:

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Part Number:

IRFP23N50LPBF

Manufacturer:

VISHAY/威世

Quantity:

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Company:

H&T Electronics

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Part Number:

IRFP23N50LPBF

Quantity:

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Company:

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H&T Electronics

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Quantity:

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Company:

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Quantity:

5 000

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I

I

I

P

V

dv/dt

T

T

I

I

V

t

Q

I

t

Absolute Maximum Ratings

Diode Characteristics

D

D

DM

S

SM

rr

RRM

on

www.irf.com

Applications

•

•

•

•

D

GS

J

STG

SD

Features and Benefits

•

•

•

•

rr

@ T

@ T

@T

Symbol

C

C

C

= 25°C Continuous Drain Current, V

= 100°C Continuous Drain Current, V

= 25°C Power Dissipation

Pulsed Drain Current

Linear Derating Factor

Gate-to-Source Voltage

Peak Diode Recovery dv/dt

Operating Junction and

Storage Temperature Range

Soldering Temperature, for 10 seconds

Mounting torque, 6-32 or M3 screw

Continuous Source Current

(Body Diode)

Pulsed Source Current

(Body Diode)

Diode Forward Voltage

Reverse Recovery Time

Reverse Recovery Charge

Reverse Recovery Current

Forward Turn-On Time

.

Parameter

Ã

Parameter

e

GS

GS

SMPS MOSFET

@ 10V

@ 10V

Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

Min. Typ. Max. Units

–––

–––

–––

–––

–––

–––

–––

–––

–––

–––

–––

170

220

560

980 1500

7.6

300 (1.6mm from case )

250

330

840

V

500V

1.5

23

92

11

10lb

-55 to + 150

DSS

x

Max.

in (1.1N

370

± 30

2.9

nC T

23

15

92

21

ns

A

V

A

R

HEXFET Power MOSFET

MOSFET symbol

showing the

integral reverse

p-n junction diode.

T

T

T

T

T

IRFP23N50L

DS(on)

0.190Ω

J

J

J

J

J

J

x

= 125°C, di/dt = 100A/µs

= 125°C, di/dt = 100A/µs

m)

= 25°C, I

= 25°C, I

= 25°C, I

= 25°C

Conditions

typ.

S

F

S

= 14A, V

= 23A

= 23A, V

Trr

170ns

TO-247AC

GS

GS

PD - 94230C

typ.

= 0V

= 0V

f

f

Units

W/°C

V/ns

°C

W

A

V

f

f

23A

I

D

1

07/20/04

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