IRFP23N50L Vishay, IRFP23N50L Datasheet - Page 7
![MOSFET N-CH 500V 23A TO-247AC](/photos/5/40/54088/to-247ac_sml.jpg)
IRFP23N50L
Manufacturer Part Number
IRFP23N50L
Description
MOSFET N-CH 500V 23A TO-247AC
Manufacturer
Vishay
Specifications of IRFP23N50L
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
235 mOhm @ 14A, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
23A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
150nC @ 10V
Input Capacitance (ciss) @ Vds
3600pF @ 25V
Power - Max
370W
Mounting Type
Through Hole
Package / Case
TO-247-3 (Straight Leads), TO-247AC
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.235 Ohms
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
23 A
Power Dissipation
370 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
*IRFP23N50L
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IRFP23N50L
Manufacturer:
IR
Quantity:
28 650
Company:
Part Number:
IRFP23N50L
Manufacturer:
IR
Quantity:
12 500
Company:
Part Number:
IRFP23N50LPBF
Manufacturer:
APT
Quantity:
10 000
Part Number:
IRFP23N50LPBF
Manufacturer:
VISHAY/威世
Quantity:
20 000
www.irf.com
Fig 16a. Gate Charge Test Circuit
Fig 15a. Unclamped Inductive Test Circuit
R G
20V
12V
V DS
V
GS
Same Type as D.U.T.
t p
Current Regulator
.2µF
I AS
D.U.T
50KΩ
3mA
Current Sampling Resistors
0.01 Ω
L
.3µF
I
G
D.U.T.
750
600
450
300
150
I
D
0
15V
25
Fig 14. Maximum Avalanche Energy
+
DRIVER
-
V
Starting T , Junction Temperature
DS
+
- V DD
50
Vs. Drain Current
A
J
75
Fig 15b. Unclamped Inductive Waveforms
Fig 16b. Basic Gate Charge Waveform
100
I
AS
V
TOP
BOTTOM
GS
V
V
G
125
Q
( C)
°
GS
t p
I D
10A
15A
23A
150
Charge
Q
Q
V
GD
G
(BR)DSS
7