IRFP31N50LPBF Vishay, IRFP31N50LPBF Datasheet - Page 3

• Manufacturer Part Number: IRFP31N50LPBF
• Description: MOSFET N-CH 500V 31A TO-247AC
• Manufacturer: Vishay

Specifications of IRFP31N50LPBF

• Transistor Polarity: N-Channel
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 180 mOhm @ 19A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 31A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 210nC @ 10V
• Input Capacitance (ciss) @ Vds: 5000pF @ 25V
• Power - Max: 460W
• Mounting Type: Through Hole
• Package / Case: TO-247-3 (Straight Leads), TO-247AC
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 0.18 Ohm @ 10 V
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 31 A
• Power Dissipation: 460000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Continuous Drain Current Id: 31A
• Drain Source Voltage Vds: 500V
• On Resistance Rds(on): 180mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 5V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: *IRFP31N50LPBF

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Document Number: 91220
S11-0488-Rev. C, 21-Mar-11
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
0.01
100
0.01
100
100
0.1
10
0.1
10
1
1
0.1
0.1
Bottom
Top
Bottom
Top
Fig. 1 - Typical Output Characteristics
Fig. 2 - Typical Output Characteristics
VGS
15 V
12 V
10 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
VGS
15 V
12 V
10 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
1
1
20 μs PULSE WIDTH
T J = 25 °C
20 μs PULSE WIDTH
T J = 150 °C
10
10
5.0 V
5.0 V
This datasheet is subject to change without notice.
100
100
1000
100
1.5
0.5
3.0
2.5
2.0
1.0
0.0
0.1
IRFP31N50L, SiHFP31N50L
Fig. 4 - Normalized On-Resistance vs. Temperature
10
1
- 60
4
I D = 31 A
- 40
Fig. 3 - Typical Transfer Characteristics
T J = 150 °C
5
- 20
V GS , Gate-to-Source Voltage (V)
0
T J , Junction Temperature
6
20 40
T J = 25 °C
7
60 80 100 120 140 160
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Vishay Siliconix
8
V DS = 50 V
20 μs PULSE WIDTH
9
V GS = 10 V
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10
11
3