IRFP31N50LPBF Vishay, IRFP31N50LPBF Datasheet - Page 4

• Manufacturer Part Number: IRFP31N50LPBF
• Description: MOSFET N-CH 500V 31A TO-247AC
• Manufacturer: Vishay

Specifications of IRFP31N50LPBF

• Transistor Polarity: N-Channel
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 180 mOhm @ 19A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 31A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 210nC @ 10V
• Input Capacitance (ciss) @ Vds: 5000pF @ 25V
• Power - Max: 460W
• Mounting Type: Through Hole
• Package / Case: TO-247-3 (Straight Leads), TO-247AC
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 0.18 Ohm @ 10 V
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 31 A
• Power Dissipation: 460000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Continuous Drain Current Id: 31A
• Drain Source Voltage Vds: 500V
• On Resistance Rds(on): 180mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 5V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: *IRFP31N50LPBF

IRFP31N50L, SiHFP31N50L
Vishay Siliconix
www.vishay.com
4
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
1 000 000
100 000
10 000
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
1000
100
Fig. 6 - Output Capacitance Stored Energy vs. V
10
30
25
20
15
10
5
0
0
1
100
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
V GS = 0 V,
C iss = C gs + C gd , C ds
C rss = C gd
C oss = C ds + C gd
200
10
300
C oss
C rss
C iss
400
100
This datasheet is subject to change without notice.
SHORTED
f = 1 MHz
500
600
1000
DS
Fig. 7 - Typical Gate Charge vs. Gate-to-Source Voltage
1000
20
12
Fig. 8 - Typical Source Drain Diode Forward Voltage
100
0.1
10
8
4
0
1
0.2
0
I D = 31 A
T J = 150 °C
V SD , Source-to-Drain Voltage (V)
40
0.6
Q G , Total Gate Charge (nC)
T J = 25 °C
1.0
80
S11-0488-Rev. C, 21-Mar-11
www.vishay.com/doc?91000
Document Number: 91220
V DS = 400 V
V DS = 250 V
V DS = 100 V
120
1.4
V GS = 0 V
160
1.8