IRFP31N50LPBF Vishay, IRFP31N50LPBF Datasheet - Page 2
![MOSFET N-CH 500V 31A TO-247AC](/photos/5/40/54088/to-247ac_sml.jpg)
IRFP31N50LPBF
Manufacturer Part Number
IRFP31N50LPBF
Description
MOSFET N-CH 500V 31A TO-247AC
Manufacturer
Vishay
Specifications of IRFP31N50LPBF
Transistor Polarity
N-Channel
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
180 mOhm @ 19A, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
31A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
210nC @ 10V
Input Capacitance (ciss) @ Vds
5000pF @ 25V
Power - Max
460W
Mounting Type
Through Hole
Package / Case
TO-247-3 (Straight Leads), TO-247AC
Minimum Operating Temperature
- 55 C
Configuration
Single
Resistance Drain-source Rds (on)
0.18 Ohm @ 10 V
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
31 A
Power Dissipation
460000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Continuous Drain Current Id
31A
Drain Source Voltage Vds
500V
On Resistance Rds(on)
180mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
5V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
*IRFP31N50LPBF
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IRFP31N50LPBF
Manufacturer:
TOREX
Quantity:
3 001
Company:
Part Number:
IRFP31N50LPBF
Manufacturer:
IR
Quantity:
4 250
Part Number:
IRFP31N50LPBF
Manufacturer:
IR
Quantity:
20 000
IRFP31N50LPbF
Document Number: 91220
V
∆V
R
V
I
I
R
gfs
Q
Q
Q
t
t
t
t
C
C
C
C
C
C
C
E
I
E
R
R
R
Notes:
Static @ T
Dynamic @ T
Avalanche Characteristics
Thermal Resistance
DSS
GSS
d(on)
r
d(off)
f
AR
(BR)DSS
GS(th)
AS
AR
DS(on)
G
iss
oss
rss
oss
oss
oss
oss
θJC
θCS
θJA
g
gs
gd
Repetitive rating; pulse width limited by
I
(BR)DSS
max. junction temperature. (See Fig. 11)
T
Starting T
SD
Symbol
Symbol
Symbol
Symbol
I
AS
J
eff.
eff. (ER)
≤ 150°C.
= 31A, di/dt ≤ 422A/µs, V
= 31A (See Figure 12).
/∆T
J
J
= 25°C, L = 1mH, R
J
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Internal Gate Resistance
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
Effective Output Capacitance
(Energy Related)
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
= 25°C (unless otherwise specified)
J
= 25°C (unless otherwise specified)
Parameter
Parameter
Parameter
Parameter
DD
≤ V
G
Ã
= 25Ω,
(BR)DSS
,
Pulse width ≤ 300µs; duty cycle ≤ 2%.
C
C
as C
as C
oss
oss
Min. Typ. Max. Units
Min. Typ. Max. Units
500
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
3.0
15
eff. is a fixed capacitance that gives the same charging time
oss
oss
eff.(ER) is a fixed capacitance that stores the same energy
while V
while V
5000
6630
0.28
0.15
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
115
553
155
276
200
1.1
28
54
53
59
DS
DS
Typ.
-100
Typ.
0.18
0.24
is rising from 0 to 80% V
–––
–––
100
–––
–––
210
100
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
5.0
2.0
is rising from 0 to 80% V
50
58
V/°C
mA
nC
µA
nA
pF
ns
Ω
Ω
V
V
S
V
V
V
V
f = 1MHz, open drain
I
V
R
V
V
V
Reference to 25°C, I
V
V
V
V
V
I
V
ƒ = 1.0MHz, See Fig. 5
V
V
V
D
D
GS
GS
DS
DS
DS
GS
GS
DS
DS
GS
DD
GS
GS
DS
GS
GS
GS
G
= 31A
= 31A
= 4.3Ω
= 0V, I
= 10V, I
= V
= 500V, V
= 400V, V
= 30V
= -30V
= 50V, I
= 400V
= 10V, See Fig. 7 & 15
= 250V
= 10V, See Fig. 14a & 14b
= 0V
= 25V
= 0V, V
= 0V, V
= 0V,V
GS
Max.
Max.
0.26
460
–––
, I
31
46
40
DSS
Conditions
Conditions
D
DS
D
DS
DS
DSS
D
D
= 250µA
= 250µA
= 19A
= 19A
= 0V to 400V
GS
GS
.
= 1.0V, ƒ = 1.0MHz
= 400V, ƒ = 1.0MHz
.
= 0V
= 0V, T
www.vishay.com
D
f
= 1mA
J
= 125°C
Units
Units
°C/W
f
g
mJ
mJ
A
f
2