IRFP31N50LPBF Vishay, IRFP31N50LPBF Datasheet - Page 6
![MOSFET N-CH 500V 31A TO-247AC](/photos/5/40/54088/to-247ac_sml.jpg)
IRFP31N50LPBF
Manufacturer Part Number
IRFP31N50LPBF
Description
MOSFET N-CH 500V 31A TO-247AC
Manufacturer
Vishay
Specifications of IRFP31N50LPBF
Transistor Polarity
N-Channel
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
180 mOhm @ 19A, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
31A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
210nC @ 10V
Input Capacitance (ciss) @ Vds
5000pF @ 25V
Power - Max
460W
Mounting Type
Through Hole
Package / Case
TO-247-3 (Straight Leads), TO-247AC
Minimum Operating Temperature
- 55 C
Configuration
Single
Resistance Drain-source Rds (on)
0.18 Ohm @ 10 V
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
31 A
Power Dissipation
460000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Continuous Drain Current Id
31A
Drain Source Voltage Vds
500V
On Resistance Rds(on)
180mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
5V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
*IRFP31N50LPBF
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IRFP31N50LPBF
Manufacturer:
TOREX
Quantity:
3 001
Company:
Part Number:
IRFP31N50LPBF
Manufacturer:
IR
Quantity:
4 250
Part Number:
IRFP31N50LPBF
Manufacturer:
IR
Quantity:
20 000
Fig 14a. Unclamped Inductive Test Circuit
IRFP31N50LPbF
Document Number: 91220
Fig 15a. Gate Charge Test Circuit
1000
100
10
1
Fig 12. Maximum Safe Operating
10
T
T
Single Pulse
C
J
R G
20V
12V
= 25 C °
= 150 C
V DS
OPERATION IN THIS AREA LIMITED
V
GS
V
DS
Same Type as D.U.T.
t p
Current Regulator
°
.2µF
, Drain-to-Source Voltage (V)
I AS
D.U.T
50KΩ
3mA
Current Sampling Resistors
Area
0.01 Ω
L
BY R
.3µF
I
G
100
DS(on)
D.U.T.
I
D
15V
DRIVER
+
-
V
DS
+
10us
100us
1ms
10ms
-
V DD
1000
A
Fig 14b. Unclamped Inductive Waveforms
1000
800
600
400
200
I
AS
Fig 15b. Basic Gate Charge Waveform
0
25
V
Fig 13. Maximum Avalanche Energy
GS
Starting T , Junction Temperature ( C)
V
G
50
t p
Q
GS
Vs. Drain Current
J
75
V
(BR)DSS
Q
Charge
Q
GD
G
100
TOP
BOTTOM
www.vishay.com
125
I D
14A
20A
31A
°
150
6