PMBF170,215 NXP Semiconductors, PMBF170,215 Datasheet - Page 4

• Manufacturer Part Number: PMBF170,215
• Description: MOSFET N-CH 60V 300MA SOT-23
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of PMBF170,215

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Mounting Type: Surface Mount
• Power - Max: 830mW
• Fet Type: MOSFET N-Channel, Metal Oxide
• Vgs(th) (max) @ Id: 2V @ 1mA
• Current - Continuous Drain (id) @ 25° C: 300mA
• Drain To Source Voltage (vdss): 60V
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 5 Ohm @ 500mA, 10V
• Minimum Operating Temperature: - 65 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 5 Ohm @ 10 V
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 0.3 A
• Power Dissipation: 830 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 933966340215::PMBF170 T/R::PMBF170 T/R

7. Thermal characteristics
Table 4:
Philips Semiconductors
9397 750 07208
Product specification
Symbol
R
R
th(j-sp)
th(j-a)
Thermal characteristics
Parameter
thermal resistance from junction to solder
point
thermal resistance from junction to ambient
7.1 Transient thermal impedance
Fig 4. Transient thermal impedance from junction to solder point as a function of
Mounted on metal clad substrate.
pulse duration.
Z th(j-sp)
K/W
10 -1
10 3
10
10 2
1
10 -5
0.2
0.1
0.02
= 0.5
Rev. 03 — 23 June 2000
single pulse
10 -4
Conditions
mounted on a metal clad substrate;
Figure 4
mounted on a printed circuit board;
minimum footprint
N-channel enhancement mode field-effect transistor
0.05
10 -3
10 -2
10 -1
© Philips Electronics N.V. 2000. All rights reserved.
P
PMBF170
Value
150
350
t p
1
T
t p (s)
=
03aa01
t p
T
t
10
Unit
K/W
K/W
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