BUK98150-55A,135 NXP Semiconductors, BUK98150-55A,135 Datasheet - Page 6

• Manufacturer Part Number: BUK98150-55A,135
• Description: MOSFET N-CH 55V 5.5A SOT-223
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK98150-55A,135

• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 137 mOhm @ 5A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 5.5A
• Vgs(th) (max) @ Id: 2V @ 1mA
• Gate Charge (qg) @ Vgs: 5.3nC @ 5V
• Input Capacitance (ciss) @ Vds: 320pF @ 25V
• Power - Max: 8W
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.137 Ohm @ 10 V
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 15 V
• Continuous Drain Current: 5 A
• Power Dissipation: 8000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934056193135; BUK98150-55A /T3; BUK98150-55A /T3

NXP Semiconductors
BUK98150-55A_4
Product data sheet
Fig 5. Output characteristics: drain current as a
Fig 7. Drain-source on-state resistance as a function
R
(m )
DSon
300
200
100
(A)
25
20
15
10
I
D
5
0
T
function of drain-source voltage; typical values
T
of drain current; typical values
2
0
j
j
= 25 C
= 25 C
V
2
GS
10
8
4
= 3 (V)
4
6
3.2
V
6
GS
= 6 (V)
4.6
4.0
2.6
4.2
3.6
3.4
3.2
3.0
2.2
5
8
3.4
8
003aab631
003aab633
I
V
D
DS
(A)
(V)
3.6
10
3.8
4
5
10
10
Rev. 04 — 11 June 2007
Fig 6. Drain-source on-state resistance as a function
Fig 8. Normalized drain-source on-state resistance
R
(m )
DSon
140
120
100
a
1.8
1.6
1.4
1.2
0.8
0.6
0.4
0.2
80
2
1
0
T
of gate-source voltage; typical values
factor as a function of junction temperature
a
-60
0
j
= 25 C; I
=
----------------------------- -
R
DSon 25 C
-20
N-channel TrenchMOS logic level FET
R
DSon
D
= 5 A
20
5
BUK98150-55A
60
100
10
© NXP B.V. 2007. All rights reserved.
V
GS
140
003aab632
(V)
03nc24
T
j
( C)
180
15
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