BSH207,135 NXP Semiconductors, BSH207,135 Datasheet

MOSFET P-CH 12V 1.52A SOT457

BSH207,135

Manufacturer Part Number
BSH207,135
Description
MOSFET P-CH 12V 1.52A SOT457
Manufacturer
NXP Semiconductors
Datasheet
1.BSH207135.pdf (7 pages)

Specifications of BSH207,135

Package / Case
SC-74-6
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
120 mOhm @ 1A, 4.5V
Drain To Source Voltage (vdss)
12V
Current - Continuous Drain (id) @ 25° C
1.52A
Vgs(th) (max) @ Id
600mV @ 1mA
Gate Charge (qg) @ Vgs
8.8nC @ 4.5V
Input Capacitance (ciss) @ Vds
500pF @ 9.6V
Power - Max
417mW
Mounting Type
Surface Mount
Minimum Operating Temperature
- 55 C
Configuration
Single Quad Drain
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.12 Ohm @ 4.5 V
Drain-source Breakdown Voltage
12 V
Gate-source Breakdown Voltage
+/- 8 V
Continuous Drain Current
1.52 A
Power Dissipation
417 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
934055227135
BSH207 /T3
BSH207 /T3
Philips Semiconductors
FEATURES
• Very low threshold voltage
• Fast switching
• Logic level compatible
• Subminiature surface mount
package
GENERAL DESCRIPTION
P-channel, enhancement mode,
logic
transistor. This device has low
threshold voltage and extremely
fast switching making it ideal for
battery powered applications and
high speed digital interfacing.
The BSH207 is supplied in the
SOT457
mounting package.
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
THERMAL RESISTANCES
August 1998
P-channel enhancement mode
MOS transistor
SYMBOL
V
V
V
I
I
P
T
SYMBOL
R
D
DM
stg
DS
DGR
GS
tot
th j-a
, T
j
level,
subminiature
PARAMETER
Drain-source voltage
Drain-gate voltage
Gate-source voltage
Drain current (DC)
Drain current (pulse peak value)
Total power dissipation
Storage & operating temperature
PARAMETER
Thermal resistance junction to
ambient
field-effect
surface
power
PINNING
SYMBOL
1,2,5,6 drain
PIN
3
4
gate
source
g
CONDITIONS
R
T
T
T
T
T
CONDITIONS
FR4 board, minimum
footprint
a
a
a
a
a
GS
DESCRIPTION
= 25 ˚C
= 100 ˚C
= 25 ˚C
= 25 ˚C
= 100 ˚C
= 20 k
1
d
s
QUICK REFERENCE DATA
R
SOT457
DS(ON)
TYP.
MIN.
- 55
300
-
-
-
-
-
-
-
-
V
0.15
V
I
GS(TO)
D
DS
= -1.52 A
Product specification
1
6
= -12 V
MAX.
0.417
MAX.
-1.52
-0.96
-6.09
0.17
150
-12
-12
-
2
5
8
(V
0.4 V
GS
4
3
BSH207
= -2.5 V)
Top view
Rev 1.000
UNIT
UNIT
K/W
W
W
˚C
V
V
V
A
A
A

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BSH207,135 Summary of contents

Page 1

Philips Semiconductors P-channel enhancement mode MOS transistor FEATURES • Very low threshold voltage • Fast switching • Logic level compatible • Subminiature surface mount package GENERAL DESCRIPTION P-channel, enhancement mode, logic level, field-effect power transistor. This device has low threshold ...

Page 2

Philips Semiconductors P-channel enhancement mode MOS transistor ELECTRICAL CHARACTERISTICS T = 25˚C unless otherwise specified j SYMBOL PARAMETER V Drain-source breakdown (BR)DSS voltage V Gate threshold voltage GS(TO) R Drain-source on-state DS(ON) resistance g Forward transconductance fs I Gate source ...

Page 3

Philips Semiconductors P-channel enhancement mode MOS transistor Normalised Power Dissipation, PD (%) 120 100 Ambient Temperature, Ta (C) Fig.1. Normalised power dissipation. PD% = 100 ˚C ...

Page 4

Philips Semiconductors P-channel enhancement mode MOS transistor Drain Current, ID (A) -5 -4.5 VDS > RDS(on -3.5 -3 -2.5 -2 -1 -0.5 -1 Gate-Source Voltage, VGS (V) Fig.7. Typical ...

Page 5

Philips Semiconductors P-channel enhancement mode MOS transistor Gate-source voltage, VGS (V) -5 VDD = Ohms - Gate charge, (nC) Fig.13. Typical ...

Page 6

Philips Semiconductors P-channel enhancement mode MOS transistor MECHANICAL DATA Plastic surface mounted package; 6 leads y DIMENSIONS (mm are the original dimensions) UNIT 0.1 1.1 mm 0.013 0.9 OUTLINE VERSION SOT457 Notes 1. This product is supplied ...

Page 7

Philips Semiconductors P-channel enhancement mode MOS transistor DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification ...

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