PMV213SN,215 NXP Semiconductors, PMV213SN,215 Datasheet - Page 5

• Manufacturer Part Number: PMV213SN,215
• Description: MOSFET N-CH 100V 1.9A SOT23
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of PMV213SN,215

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 250 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 1.9A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 7nC @ 10V
• Input Capacitance (ciss) @ Vds: 330pF @ 20V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.25 Ohm @ 10 V
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 1.9 A
• Power Dissipation: 2000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934057521215; PMV213SN T/R; PMV213SN T/R

Philips Semiconductors
5. Characteristics
Table 4:
T
9397 750 11128
Product data
Symbol Parameter
Static characteristics
V
V
I
I
R
Dynamic characteristics
Q
Q
Q
C
C
C
t
t
t
t
Source-drain diode
V
t
Q
DSS
GSS
d(on)
r
d(off)
f
rr
j
(BR)DSS
GS(th)
SD
DSon
iss
oss
rss
g(tot)
gs
gd
r
= 25 C unless otherwise specified.
drain-source breakdown voltage
gate-source threshold voltage
drain-source leakage current
gate-source leakage current
drain-source on-state resistance
total gate charge
gate-source charge
gate-drain (Miller) charge
input capacitance
output capacitance
reverse transfer capacitance
turn-on delay time
rise time
turn-off delay time
fall time
source-drain (diode forward) voltage I
reverse recovery time
recovered charge
Characteristics
Conditions
I
I
V
V
V
I
V
V
I
D
D
D
S
S
Rev. 02 — 19 February 2003
DS
GS
GS
GS
DD
T
T
T
T
T
T
T
T
T
= 1.5 A; V
= 1.2 A; dI
= 250 A; V
= 1 mA; V
= 1.2 A; V
j
j
j
j
j
j
j
j
j
= 100 V; V
= 20 V; V
= 10 V; I
= 0 V; V
= 50 V; R
= 25 C
= 55 C
= 25 C
= 150 C
= 55 C
= 25 C
= 150 C
= 25 C
= 150 C
GS
DS
DD
DS
S
D
L
/dt = 100 A/ s; V
GS
= 0.5 A;
GS
DS
= V
= 80 V; V
= 20 V; f = 1 MHz;
= 33 ; V
= 0 V;
= 0 V
= 0 V
= 0 V
GS
;
Figure 12
Figure 9
Figure 7
GS
GS
= 10 V;
= 10 V; R
GS
and
Figure 11
= 0 V
Figure 13
8
TrenchMOS™ standard level FET
G
= 6
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
PMV213SN
Min
100
90
2
1.2
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ
-
-
3
-
-
-
-
10
213
490
7
1.4
2.5
330
36
22
5.5
5
9.5
3
0.83
36
23
Max
-
-
4
-
4.4
1
100
100
250
575
-
-
-
-
-
-
-
-
-
-
1.2
-
-
5 of 12
Unit
V
V
V
V
V
nA
m
m
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
V
ns
nC
A
A