RSQ030P03TR Rohm Semiconductor, RSQ030P03TR Datasheet
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Manufacturer Part Number
RSQ030P03TR
Description
MOSFET P-CH 30V 3A TSMT6
Manufacturer
Rohm Semiconductor
Specifications of RSQ030P03TR
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
80 mOhm @ 3A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
3A
Vgs(th) (max) @ Id
2.5V @ 1mA
Gate Charge (qg) @ Vgs
6nC @ 5V
Input Capacitance (ciss) @ Vds
440pF @ 10V
Power - Max
1.25W
Mounting Type
Surface Mount
Package / Case
TSMT6
Configuration
Single Quad Drain
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.08 Ohm @ 10 V
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
3 A
Power Dissipation
1250 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Transistor
DC-DC Converter (−30V, −3A)
RSQ030P03
1) Low On-resistance.(90mΩ at 4.5V)
2) High Power Package.
3) High speed switching.
4) Low voltage drive.(4.5V)
DC-DC converter
Silicon P-channel
MOSFET
Type
RSQ030P03
Features
Structure
Packaging specifications
Applications
Package
Code
Basic ordering unit
(pieces)
Taping
3000
TR
1 ESD PROTECTION DIODE
2 BODY DIODE
External dimensions (Units : mm)
Equivalent circuit
TSMT6
(6)
(1)
Abbreviatedsymbol : TN
(5)
(2)
2
Each lead has same dimensions
RSQ030P03
1
(4)
(3)
(1)DRAIN
(2)DRAIN
(3)GATE
(4)SOURCE
(5)DRAIN
(6)DRAIN
1/4
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RSQ030P03TR Summary of contents
Transistor DC-DC Converter (−30V, −3A) RSQ030P03 Features 1) Low On-resistance.(90mΩ at 4.5V) 2) High Power Package. 3) High speed switching. 4) Low voltage drive.(4.5V) Applications DC-DC converter Structure Silicon P-channel MOSFET Packaging specifications Package Code Type Basic ordering unit (pieces) ...
Transistor Absolute maximum ratings (Ta=25°C) Parameter Drain source voltage Gate source voltage Continuous Drain current Pulsed Continuous Source current (Body diode) Pulsed Total power dissipation Channel temperature Range of Storage temperature Duty cycle 1% 2 Mounted ...
Transistor Electrical characteristic curves 10 V 10V DS pulsed 1 Ta 125 0.1 0.01 0.001 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 Gate Source Voltage Fig.1 Typical Transfer Characteristics ...
Transistor Measurement circuits D.U. Fig.10 Switching Time Measurement Circuit (Const D.U. Fig.12 Gate Charge Measurement ...
Appendix No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product ...
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