RRH050P03TB1 Rohm Semiconductor, RRH050P03TB1 Datasheet
RRH050P03TB1
Specifications of RRH050P03TB1
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RRH050P03TB1 Summary of contents
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Drive Pch MOSFET RRH050P03 Structure Silicon P-channel MOSFET Features 1) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (SOP8). Application Switching Packaging specifications Package Taping Type Code TB 2500 Basic ordering unit (pieces) RRH050P03 Absolute ...
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RRH050P03 Electrical characteristics (Ta = 25C) Parameter Symbol Gate-source leakage I GSS Drain-source breakdown voltage V (BR)DSS Zero gate voltage drain current I DSS Gate threshold voltage V GS (th) Static drain-source on-state ∗ (on) resistance ∗ Forward ...
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RRH050P03 Electrical characteristic curves 10 Ta=25 °C V =-10V GS Pulsed 8 V =-4. =-4. =-3. =-3. =-2. 0.0 0.2 0.4 0.6 0.8 1.0 DRAIN-SOURCE VOLTAGE -V ...
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RRH050P03 200 Ta=25 °C 180 Pulsed 160 140 120 I = -5.00A D 100 -2.50A GATE-SURCE VOLTAGE : -V GS Fig.10 Static Drain-Source On-State Resistance ...
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RRH050P03 Measurement circuit D.U. Fig.1-1 Switching Time Measurement Circuit G(Const.) D.U. Fig.2-1 Gate Charge Measurement ...
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