BUK9245-55A,118 NXP Semiconductors, BUK9245-55A,118 Datasheet - Page 6

• Manufacturer Part Number: BUK9245-55A,118
• Description: MOSFET N-CH 55V 28A SOT428
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK9245-55A,118

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 40 mOhm @ 5A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 28A
• Vgs(th) (max) @ Id: 2V @ 1mA
• Gate Charge (qg) @ Vgs: 14nC @ 5V
• Input Capacitance (ciss) @ Vds: 1006pF @ 25V
• Power - Max: 70W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.04 Ohms
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 15 V
• Continuous Drain Current: 28 A
• Power Dissipation: 70 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934056853118; BUK9245-55A /T3; BUK9245-55A /T3

Philips Semiconductors
Table 5:
T
9397 750 08559
Product data
Symbol
Source-drain diode
V
t
Q
rr
j
Fig 5. Output characteristics: drain current as a
Fig 7. Drain-source on-state resistance as a function
SD
r
= 25 C unless otherwise specified
T
T
j
j
= 25 C
R DSon
= 25 C
function of drain-source voltage; typical values.
of drain current; typical values.
I D
(m )
(A)
100
80
60
40
20
80
60
40
20
0
0
Characteristics
Parameter
source-drain (diode forward)
voltage
reverse recovery time
recovered charge
0
0
V GS (V) = 3
2
20
6
3.4
4
8
…continued
3.8 4
40
6
V GS (V) = 10
60
5
8
V DS (V)
I D (A)
Conditions
I
Figure 15
I
V
S
S
03nf95
GS
2.2
= 8 A; V
= 20 A; dI
4
3
5
10
80
= 10 V; V
Rev. 01 — 11 October 2001
GS
S
/dt = 100 A/ s
= 0 V;
DS
= 30 V
Fig 6. Drain-source on-state resistance as a function
Fig 8. Normalized drain-source on-state resistance
T
a
R DSon
j
= 25 C; I
=
(m )
of gate-source voltage; typical values.
factor as a function of junction temperature.
a
1.5
0.5
45
40
35
30
25
2
1
0
---------------------------- -
R
-60
DSon 25 C
3
R
DSon
D
Min
= 5 A
6
0
TrenchMOS™ logic level FET
© Koninklijke Philips Electronics N.V. 2001. All rights reserved.
BUK9245-55A
Typ
0.85
50
53
60
9
120
12
V GS (V)
T j (ºC)
Max
1.2
03ne89
180
15
Unit
V
ns
nC
6 of 12