PHT6NQ10T,135 NXP Semiconductors, PHT6NQ10T,135 Datasheet

MOSFET N-CH 100V 6.5A SOT223

PHT6NQ10T,135

Manufacturer Part Number
PHT6NQ10T,135
Description
MOSFET N-CH 100V 6.5A SOT223
Manufacturer
NXP Semiconductors
Series
TrenchMOS™r
Datasheet
1.PHT6NQ10T135.pdf (7 pages)

Specifications of PHT6NQ10T,135

Package / Case
SOT-223 (3 leads + Tab), SC-73, TO-261
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
90 mOhm @ 3A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
6.5A
Vgs(th) (max) @ Id
4V @ 1mA
Gate Charge (qg) @ Vgs
21nC @ 10V
Input Capacitance (ciss) @ Vds
633pF @ 25V
Power - Max
8.3W
Mounting Type
Surface Mount
Minimum Operating Temperature
- 65 C
Configuration
Single Dual Drain
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.09 Ohm @ 10 V
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
3 A
Power Dissipation
1800 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
934055876135
PHT6NQ10T /T3
PHT6NQ10T /T3

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Meier Automation Equipment Co., Limited Meier Automation Equipment Co., Limited
Part Number:
PHT6NQ10T,135
Manufacturer:
NEXPERIA/安世
Quantity:
20 000
Company:
H&T Electronics H&T Electronics
Part Number:
PHT6NQ10T,135
Quantity:
4 000
Philips Semiconductors
FEATURES
• ’Trench’ technology
• Low on-state resistance
• Fast switching
• Low thermal resistance
GENERAL DESCRIPTION
N-channel
field-effect transistor in a plastic
envelope
technology.
Applications:-
• Motor and relay drivers
• d.c. to d.c. converters
The PHT6NQ10T is supplied in the
SOT223
package.
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
THERMAL RESISTANCES
August 1999
N-channel TrenchMOS
SYMBOL PARAMETER
V
V
V
I
I
I
P
T
SYMBOL
R
R
D
D
DM
j
DSS
DGR
GS
D
, T
th j-sp
th j-amb
stg
Drain-source voltage
Drain-gate voltage
Gate-source voltage
Continuous drain current (dc) T
Continuous drain current (dc) T
Pulsed drain current
Total power dissipation
Operating junction and
storage temperature
enhancement
surface
PARAMETER
Thermal resistance junction to
solder point
Thermal resistance junction to
ambient
using
mounting
’trench’
mode
transistor
PINNING
SYMBOL
PIN
1
2
3
4
CONDITIONS
T
T
T
T
T
T
j
j
sp
amb
sp
amb
sp
amb
= 25 ˚C to 150˚C
= 25 ˚C to 150˚C; R
= 25 ˚C
= 100 ˚C
= 25 ˚C
= 25 ˚C
= 100 ˚C
= 25 ˚C
gate
drain
source
drain (tab)
g
CONDITIONS
surface mounted, FR4
board
surface mounted, FR4
board
DESCRIPTION
1
d
s
GS
= 20 k
QUICK REFERENCE DATA
SOT223
TYP.
12
70
R
MIN.
- 65
V
DS(ON)
-
-
-
-
-
-
-
-
-
-
DSS
I
D
1
Product specification
= 6.5 A
MAX.
= 100 V
15
PHT6NQ10T
-
MAX.
90 m
100
100
150
6.5
4.1
1.9
8.3
1.8
2
26
3
20
4
Rev 1.000
3
UNIT
K/W
K/W
UNIT
W
W
˚C
V
V
V
A
A
A
A
A

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PHT6NQ10T,135 Summary of contents

Page 1

Philips Semiconductors N-channel TrenchMOS FEATURES • ’Trench’ technology • Low on-state resistance • Fast switching • Low thermal resistance GENERAL DESCRIPTION N-channel enhancement mode field-effect transistor in a plastic envelope using ’trench’ technology. Applications:- • Motor and relay drivers • ...

Page 2

Philips Semiconductors N-channel TrenchMOS ELECTRICAL CHARACTERISTICS T = 25˚C unless otherwise specified j SYMBOL PARAMETER V Drain-source breakdown (BR)DSS voltage V Gate threshold voltage GS(TO) R Drain-source on-state DS(ON) resistance I Gate source leakage current V GSS I Zero gate ...

Page 3

Philips Semiconductors N-channel TrenchMOS Normalised Power Derating, PD (%) 100 Solder Point temperature, Tsp (C) Fig.1. Normalised power dissipation. PD% = 100 ...

Page 4

Philips Semiconductors N-channel TrenchMOS Drain current, ID (A) 6 VDS > RDS(ON 150 Gate-source voltage, VGS (V) Fig.7. Typical transfer characteristics f ...

Page 5

Philips Semiconductors N-channel TrenchMOS Gate-source voltage, VGS ( VDD = VDD = ...

Page 6

Philips Semiconductors N-channel TrenchMOS MECHANICAL DATA Plastic surface mounted package; collector pad for good heat transfer; 4 leads y 1 DIMENSIONS (mm are the original dimensions) UNIT 1.8 0.10 0.80 mm 1.5 0.01 0.60 OUTLINE VERSION SOT223 ...

Page 7

Philips Semiconductors N-channel TrenchMOS DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet ...

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