BUK9275-100A,118 NXP Semiconductors, BUK9275-100A,118 Datasheet - Page 4

• Manufacturer Part Number: BUK9275-100A,118
• Description: MOSFET N-CH 100V 21.7A DPAK
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK9275-100A,118

• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 72 mOhm @ 10A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 21.7A
• Vgs(th) (max) @ Id: 2V @ 1mA
• Input Capacitance (ciss) @ Vds: 1690pF @ 25V
• Power - Max: 88W
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.072 Ohm @ 10 V
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 10 V
• Continuous Drain Current: 21.7 A
• Power Dissipation: 88000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934056253118; BUK9275-100A /T3; BUK9275-100A /T3

NXP Semiconductors
5. Thermal characteristics
Table 5.
BUK9275-100A
Product data sheet
Symbol
R
R
Fig 4.
th(j-mb)
th(j-a)
Transient thermal impedance from junction to ambient as a function of pulse duration
Thermal characteristics
Parameter
thermal resistance
from junction to
mounting base
thermal resistance
from junction to
ambient
Z
(K/W)
th(j-mb)
10
10
10
−1
−2
1
10
−6
0.02
0.2
0.1
0.05
δ = 0.5
Single Shot
10
−5
Conditions
see
All information provided in this document is subject to legal disclaimers.
Figure 4
10
−4
Rev. 03 — 15 June 2010
10
−3
10
−2
N-channel TrenchMOS logic level FET
P
10
t
p
−1
T
BUK9275-100A
t
p
Min
-
-
δ =
(s)
03na80
T
t
t
p
1
Typ
-
71.4
© NXP B.V. 2010. All rights reserved.
Max
1.7
-
Unit
K/W
K/W
4 of 13