PHD97NQ03LT,118 NXP Semiconductors, PHD97NQ03LT,118 Datasheet - Page 7

• Manufacturer Part Number: PHD97NQ03LT,118
• Description: MOSFET N-CH TRENCH 25V SOT428
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of PHD97NQ03LT,118

• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 6.3 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 25V
• Current - Continuous Drain (id) @ 25° C: 75A
• Vgs(th) (max) @ Id: 2.15V @ 1mA
• Gate Charge (qg) @ Vgs: 11.7nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 1570pF @ 12V
• Power - Max: 107W
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Power Dissipation: 107 W
• Maximum Operating Temperature: + 175 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934061139118

NXP Semiconductors
PHD97NQ03LT_1
Product data sheet
Fig 7.
Fig 9.
V
(V)
a
GS
1.6
1.2
0.8
0.4
10
2
0
8
6
4
2
0
−60
factor as a function of junction temperature
charge; typical values
Normalized drain-source on-state resistance
Gate-source voltage as a function of gate
0
I
T
D
j
= 25 A
= 25 °C
0
12 V
10
60
20
V
120
DS
Q
= 19 V
G
003aab467
T
003aab539
(nC)
j
(°C)
180
30
Rev. 01 — 24 March 2009
Fig 8.
Fig 10. Gate charge waveform definitions
R
(mΩ)
DSon
25
20
15
10
5
0
of drain current; typical values
Drain-source on-state resistance as a function
0
V
V
V
V
GS(pl)
DS
GS(th)
GS
N-channel TrenchMOS logic level FET
Q
20
GS1
V
I
Q
GS
D
GS
Q
PHD97NQ03LT
(V) =
GS2
40
Q
3.3
G(tot)
Q
GD
60
© NXP B.V. 2009. All rights reserved.
3.7
003aab537
003aaa508
I
D
(A)
4.1
4.5
10
5
6
80
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