BUK7675-100A,118 NXP Semiconductors, BUK7675-100A,118 Datasheet
BUK7675-100A,118
Specifications of BUK7675-100A,118
BUK7675-100A /T3
BUK7675-100A /T3
Related parts for BUK7675-100A,118
BUK7675-100A,118 Summary of contents
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BUK7575-100A N-channel TrenchMOS standard level FET Rev. 02 — 30 July 2009 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET plastic package using TrenchMOS technology. This product has been designed and qualified ...
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... NXP Semiconductors 2. Pinning information Table 2. Pinning information Pin Symbol Description 1 G gate 2 D drain 3 S source mb D mounting base; connected to drain 3. Ordering information Table 3. Ordering information Type number Package Name Description BUK7575-100A TO-220AB plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead ...
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... NXP Semiconductors 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter V drain-source voltage DS V drain-gate voltage DGR V gate-source voltage GS I drain current D I peak drain current DM P total power dissipation tot T storage temperature stg ...
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... NXP Semiconductors ( Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage BUK7575-100A_2 Product data sheet DSon DS D D.C. 10 Rev. 02 — 30 July 2009 BUK7575-100A N-channel TrenchMOS standard level FET 03nb34 t p δ 100 100 (V) DS © NXP B.V. 2009. All rights reserved. ...
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... NXP Semiconductors 5. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter R thermal resistance from th(j-mb) junction to mounting base R thermal resistance from th(j-a) junction to ambient 10 Z th(j-mb) (K/W) 1 δ = 0.5 0.2 0.1 −1 10 0.05 0.02 Single Shot −2 10 −6 10 Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration ...
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... NXP Semiconductors 6. Characteristics Table 6. Characteristics Symbol Parameter Static characteristics V drain-source (BR)DSS breakdown voltage V gate-source threshold GS(th) voltage I drain leakage current DSS I gate leakage current GSS R drain-source on-state DSon resistance Dynamic characteristics C input capacitance iss C output capacitance oss C reverse transfer rss capacitance ...
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... NXP Semiconductors ( ( Fig 5. Output characteristics: drain current as a function of drain-source voltage; typical values − (A) min typ −2 10 −3 10 −4 10 −5 10 − Fig 7. Sub-threshold drain current as a function of gate-source voltage BUK7575-100A_2 Product data sheet 03nb31 90 R DSon Ω 7 (V) DS Fig 6 ...
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... NXP Semiconductors ( 175 ° Fig 9. Transfer characteristics: drain current as a function of gate-source voltage; typical values 5 V GS(th) (V) 4 max 3 typ 2 min 1 0 − Fig 11. Gate-source threshold voltage as a function of junction temperature BUK7575-100A_2 Product data sheet 03nb29 ( ° (V) GS Fig 10. Gate-source voltage as a function of turn-on gate charge ...
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... NXP Semiconductors - Fig 13. Normalized drain-source on-state resistance factor as a function of junction temperature C (pF) Fig 15. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values BUK7575-100A_2 Product data sheet 03aa29 ( 0.0 120 180 ( ° Fig 14. Reverse diode current as a function of reverse diode voltage ...
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... NXP Semiconductors 7. Package outline Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB ( DIMENSIONS (mm are the original dimensions UNIT A 1 4.5 1.39 0.9 1.3 mm 4.1 1.27 0.6 1.0 Note 1. Terminals in this zone are not tinned. OUTLINE VERSION IEC SOT78A Fig 16. Package outline SOT78A (TO-220AB) ...
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... BUK7575-100A_2 20090730 • Modifications: The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. • Legal texts have been adapted to the new company name where appropriate. • Type number BUK7575-100A separated from data sheet BUK7575_7675_100A-01. ...
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... Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice ...
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... NXP Semiconductors 11. Contents 1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1 1.1 General description . . . . . . . . . . . . . . . . . . . . . .1 1.2 Features and benefits . . . . . . . . . . . . . . . . . . . . .1 1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . .1 2 Pinning information . . . . . . . . . . . . . . . . . . . . . . .2 3 Ordering information . . . . . . . . . . . . . . . . . . . . . .2 4 Limiting values Thermal characteristics . . . . . . . . . . . . . . . . . . .5 6 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . .6 7 Package outline . . . . . . . . . . . . . . . . . . . . . . . . .10 8 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . 11 9 Legal information .12 9.1 Data sheet status ...