BUK9628-55A,118 NXP Semiconductors, BUK9628-55A,118 Datasheet - Page 8

• Manufacturer Part Number: BUK9628-55A,118
• Description: MOSFET N-CH 55V 42A D2PAK
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK9628-55A,118

• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 25 mOhm @ 15A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 42A
• Vgs(th) (max) @ Id: 2V @ 1mA
• Input Capacitance (ciss) @ Vds: 1725pF @ 25V
• Power - Max: 99W
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.025 Ohm @ 10 V
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 10 V
• Continuous Drain Current: 42 A
• Power Dissipation: 99000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934056266118; BUK9628-55A /T3; BUK9628-55A /T3

NXP Semiconductors
BUK9628-55A
Product data sheet
Fig 9.
Fig 11. Gate-source threshold voltage as a function of
V
(A)
I
GS(th)
(V)
D
100
2.5
1.5
0.5
80
60
40
20
0
2
1
0
-60
function of gate-source voltage; typical values
junction temperature
Transfer characteristics: drain current as a
0
1
0
2
T
j
= 175 °C
60
3
max
typ
min
T
j
= 25 °C
4
120
All information provided in this document is subject to legal disclaimers.
03aa33
T
5
j
V
( ° C)
03na81
GS
(V)
Rev. 02 — 17 February 2011
180
6
Fig 10. Gate-source voltage as a function of turn-on
Fig 12. Drain-source on-state resistance as a function
R
(mΩ)
V
(V)
DSon
GS
55
45
35
25
15
6
5
4
3
2
1
0
gate charge; typical values
of drain current; typical values
0
0
V
GS
10
(V) = 3
N-channel TrenchMOS logic level FET
20
10
3.2
30
V
DD
3.4
40
BUK9628-55A
= 14 V
50
3.6
20
60
3.8
V
DD
70
Q
© NXP B.V. 2011. All rights reserved.
4
G
= 44 V
(nC)
80
03na83
03na87
I
D
5
(A)
30
90
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