BUK7520-55A,127 NXP Semiconductors, BUK7520-55A,127 Datasheet - Page 8

MOSFET N-CH 55V 54A TO220AB

BUK7520-55A,127

Manufacturer Part Number
BUK7520-55A,127
Description
MOSFET N-CH 55V 54A TO220AB
Manufacturer
NXP Semiconductors
Series
TrenchMOS™r
Datasheet

Specifications of BUK7520-55A,127

Package / Case
TO-220AB-3
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
20 mOhm @ 25A, 10V
Drain To Source Voltage (vdss)
55V
Current - Continuous Drain (id) @ 25° C
54A
Vgs(th) (max) @ Id
4V @ 1mA
Input Capacitance (ciss) @ Vds
1592pF @ 25V
Power - Max
118W
Mounting Type
Through Hole
Minimum Operating Temperature
- 55 C
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.02 Ohm @ 10 V
Drain-source Breakdown Voltage
55 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
54 A
Power Dissipation
118000 mW
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gate Charge (qg) @ Vgs
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
934056255127
BUK7520-55A
BUK7520-55A
NXP Semiconductors
BUK7520-55A
Product data sheet
Fig 9.
Fig 11. Gate-source threshold voltage as a function of
V
(A)
I
GS(th)
D
(V)
120
100
80
60
40
20
0
5
4
3
2
1
0
−60
function of gate-source voltage; typical values
junction temperature
Transfer characteristics: drain current as a
0
2
0
4
60
T
max
min
j
typ
= 25 °C
6
120
T
j
= 175 °C
All information provided in this document is subject to legal disclaimers.
8
T
V
j
GS
(°C)
03nc61
03aa32
(V)
10
180
Rev. 02 — 15 June 2010
Fig 10. Gate-source voltage as a function of turn-on
Fig 12. Drain-source on-state resistance as a function
R
(mΩ)
V
(V)
DSon
GS
10
45
40
35
30
25
20
15
8
6
4
2
0
gate charge; typical values
of drain current; typical values
0
0
N-channel TrenchMOS standard level FET
5.5
V
DD
10
6
= 14 V
50
6.5
7
BUK7520-55A
20
100
V
8
DD
V
30
= 44 V
GS
© NXP B.V. 2010. All rights reserved.
I
Q
D
(V) =
G
(A)
(nC)
03nc59
03nc64
10
150
40
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